JPS577157A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS577157A
JPS577157A JP8203380A JP8203380A JPS577157A JP S577157 A JPS577157 A JP S577157A JP 8203380 A JP8203380 A JP 8203380A JP 8203380 A JP8203380 A JP 8203380A JP S577157 A JPS577157 A JP S577157A
Authority
JP
Japan
Prior art keywords
layer
type
emitter
base
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8203380A
Other languages
Japanese (ja)
Inventor
Tsunenori Yamauchi
Yutaka Tabata
Shigeharu Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8203380A priority Critical patent/JPS577157A/en
Publication of JPS577157A publication Critical patent/JPS577157A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a highly integrated pnp element by a method wherein an n type layer is piled on a p type substrate provided with a n type buried layer, while one of the p type layers within the n type layer is allowed to reach the n type buried layer. CONSTITUTION:An epitaxial layer 13 is piled on a p type Si substrate 11 having a n<+> buried layer 12 and a SiO2 mask 18 is applied to form a p<+> emitter 15 and a p<+> collector which reach a p<+> isolated layer 14 and the buried layer 12. The surface is again covered with SiO2 18 and an opening is made to form an n<+> base lead out layer 17. (The layer 17 is made simultaneously with a collector lead out layer for another npn element). Then Al electrodes 19-21 are provided. By so doing, since the emitter 15 is longitudinally long with a large area where the emitter and base have been connected, reduction in hFE in a large current region decreases. In addition, it is unnecessary to widen the emitter for enlarging the area for connecting the emitter to the base, so that the degree of integration can be improved.
JP8203380A 1980-06-17 1980-06-17 Semiconductor device Pending JPS577157A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8203380A JPS577157A (en) 1980-06-17 1980-06-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8203380A JPS577157A (en) 1980-06-17 1980-06-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS577157A true JPS577157A (en) 1982-01-14

Family

ID=13763209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8203380A Pending JPS577157A (en) 1980-06-17 1980-06-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS577157A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5990957A (en) * 1982-11-16 1984-05-25 Toko Inc Lateral pnp transistor and its manufacture
JPS60198859A (en) * 1984-03-23 1985-10-08 New Japan Radio Co Ltd Semiconductor device
JPS6367775A (en) * 1986-09-09 1988-03-26 Nec Corp semiconductor equipment
JPS6393154A (en) * 1986-10-07 1988-04-23 Nec Corp Semiconductor device
JPS63216374A (en) * 1987-03-04 1988-09-08 Nec Corp Lateral semiconductor device
KR100251021B1 (en) * 1991-05-31 2000-04-15 요트.게.아. 롤페즈 Display tube with convergence correction device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5990957A (en) * 1982-11-16 1984-05-25 Toko Inc Lateral pnp transistor and its manufacture
JPS60198859A (en) * 1984-03-23 1985-10-08 New Japan Radio Co Ltd Semiconductor device
JPS6367775A (en) * 1986-09-09 1988-03-26 Nec Corp semiconductor equipment
JPS6393154A (en) * 1986-10-07 1988-04-23 Nec Corp Semiconductor device
JPS63216374A (en) * 1987-03-04 1988-09-08 Nec Corp Lateral semiconductor device
KR100251021B1 (en) * 1991-05-31 2000-04-15 요트.게.아. 롤페즈 Display tube with convergence correction device

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