JPS5710968A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5710968A
JPS5710968A JP8578780A JP8578780A JPS5710968A JP S5710968 A JPS5710968 A JP S5710968A JP 8578780 A JP8578780 A JP 8578780A JP 8578780 A JP8578780 A JP 8578780A JP S5710968 A JPS5710968 A JP S5710968A
Authority
JP
Japan
Prior art keywords
type
layer
base
diffused
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8578780A
Other languages
Japanese (ja)
Other versions
JPS6349912B2 (en
Inventor
Kiyokazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP8578780A priority Critical patent/JPS5710968A/en
Publication of JPS5710968A publication Critical patent/JPS5710968A/en
Publication of JPS6349912B2 publication Critical patent/JPS6349912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To readily form a base-emitter resistor of small area in a transistor using as a base the P type layer laminated on an N type substrate, by forming a depletion type N channel MOST between the emitter and base. CONSTITUTION:In a P type epitaxial layer 2 laminated on an N type semiconductor substrate 1, a P type diffused layer 4 and N type diffused layers 3 and 6 are provided, the substrate 1 being defined as a collector region while the layer 3 as an emitter region. In addition, a proper distance is provided between the diffused layers 3 and 6, and the diffused layer 4 is positioned so as to be outer than the diffused layer 6 with respect to the diffused layer 3. The N<+> diffused layer 6 is connected to the P<+> type diffused layer 4 through wiring 7. The pinchoff resistance due to the N type region 6 becomes the base input resistance between a base input terminal 4 and the emitter region 3, and from the regions 3 and 6 and P type layer 2, an N type MOST is formed to be an emitter-base resistance.
JP8578780A 1980-06-23 1980-06-23 Semiconductor device Granted JPS5710968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8578780A JPS5710968A (en) 1980-06-23 1980-06-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8578780A JPS5710968A (en) 1980-06-23 1980-06-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5710968A true JPS5710968A (en) 1982-01-20
JPS6349912B2 JPS6349912B2 (en) 1988-10-06

Family

ID=13868591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8578780A Granted JPS5710968A (en) 1980-06-23 1980-06-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710968A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206160A (en) * 1992-09-17 1993-08-13 Rohm Co Ltd Transistor containing resistor
JP2015228496A (en) * 2014-05-08 2015-12-17 三菱電機株式会社 Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206160A (en) * 1992-09-17 1993-08-13 Rohm Co Ltd Transistor containing resistor
JPH0722164B2 (en) * 1992-09-17 1995-03-08 ローム株式会社 Transistor with built-in resistor
JP2015228496A (en) * 2014-05-08 2015-12-17 三菱電機株式会社 Semiconductor device

Also Published As

Publication number Publication date
JPS6349912B2 (en) 1988-10-06

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