JPS5637677A - Silicon planar type thyristor - Google Patents
Silicon planar type thyristorInfo
- Publication number
- JPS5637677A JPS5637677A JP11333179A JP11333179A JPS5637677A JP S5637677 A JPS5637677 A JP S5637677A JP 11333179 A JP11333179 A JP 11333179A JP 11333179 A JP11333179 A JP 11333179A JP S5637677 A JPS5637677 A JP S5637677A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- thyristor
- channel stopper
- punch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 108091006146 Channels Proteins 0.000 abstract 2
- 230000002457 bidirectional effect Effects 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To eliminate use of surge protective element in a bidirectional rectifying circuit by so disposing an N type channel stopper as to make contact with an depletion layer extended from a P type punch through region. CONSTITUTION:A thyristor is formed of an N type Si substrate 1, a P type punch through diffused region 2, a P type emitter region 3, a P type base region 4, and an N type emitter region 5 and the like. In this thyristor is formed a ring-like high density N type impurity region, i.e., a channel stopper 7 surrounding the emitter region 3 is formed in the vicinity of the region 2. The channel stopper 7 serves to occur that a depletion layer extended along the surface of the substrate 1 from the P type punch through junction T4 intersects the stopper 7 by applying a reverse voltage thereto to thus occur a breakdown. Thus, the forward withstand voltage thereof becomes higher than the reverse withstand voltage, and a surge protective element can be eliminated in a bidirectional rectifying circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11333179A JPS5637677A (en) | 1979-09-04 | 1979-09-04 | Silicon planar type thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11333179A JPS5637677A (en) | 1979-09-04 | 1979-09-04 | Silicon planar type thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5637677A true JPS5637677A (en) | 1981-04-11 |
Family
ID=14609524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11333179A Pending JPS5637677A (en) | 1979-09-04 | 1979-09-04 | Silicon planar type thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637677A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6434789U (en) * | 1988-06-17 | 1989-03-02 | ||
| JP2019160927A (en) * | 2018-03-09 | 2019-09-19 | 新電元工業株式会社 | Semiconductor device |
-
1979
- 1979-09-04 JP JP11333179A patent/JPS5637677A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6434789U (en) * | 1988-06-17 | 1989-03-02 | ||
| JP2019160927A (en) * | 2018-03-09 | 2019-09-19 | 新電元工業株式会社 | Semiconductor device |
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