JPS57139971A - Semiconductor device with high withstand voltage - Google Patents

Semiconductor device with high withstand voltage

Info

Publication number
JPS57139971A
JPS57139971A JP2637781A JP2637781A JPS57139971A JP S57139971 A JPS57139971 A JP S57139971A JP 2637781 A JP2637781 A JP 2637781A JP 2637781 A JP2637781 A JP 2637781A JP S57139971 A JPS57139971 A JP S57139971A
Authority
JP
Japan
Prior art keywords
type
base region
semiconductor device
withstand voltage
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2637781A
Other languages
Japanese (ja)
Inventor
Toshio Ogawa
Yoichi Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2637781A priority Critical patent/JPS57139971A/en
Publication of JPS57139971A publication Critical patent/JPS57139971A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To improve the withstand voltage of semiconductor device by a method wherein ring shaped protective memeber is fixed to a p-n junction containing semiconductor device peripheral surface and ring shaped bevel grooves are formed running from over the protective member to the semiconductor substrate. CONSTITUTION:A p<+> type emitter region 12 is provided on one surface of an n type Si substrate 11 and a p<+> type base region 13 on the other surface. Further, an n<+> type emitter region 15 of a short circuit emitter structure is formed by diffusing an n type impurity into the base region 13. Sandwiched between the p<+> type emitter region 12 and the p<+> type base region 13 is an n type base region 14. After building electrodes 16, 17, and 18, an Si made protective ring 19 is soldered to the peripheral surface of the base region 13. And, on the protective ring 19, two ring shaped bevel grooves 20, 21 or 20', 21' are formed. Provision of grooves on the protective ring 19 preventing the rounding off the groove inside walls, a high withstand voltage p-n junction surface is obtained.
JP2637781A 1981-02-25 1981-02-25 Semiconductor device with high withstand voltage Pending JPS57139971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2637781A JPS57139971A (en) 1981-02-25 1981-02-25 Semiconductor device with high withstand voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2637781A JPS57139971A (en) 1981-02-25 1981-02-25 Semiconductor device with high withstand voltage

Publications (1)

Publication Number Publication Date
JPS57139971A true JPS57139971A (en) 1982-08-30

Family

ID=12191820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2637781A Pending JPS57139971A (en) 1981-02-25 1981-02-25 Semiconductor device with high withstand voltage

Country Status (1)

Country Link
JP (1) JPS57139971A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198073A (en) * 1988-02-03 1989-08-09 Nippon Inter Electronics Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198073A (en) * 1988-02-03 1989-08-09 Nippon Inter Electronics Corp Manufacture of semiconductor device

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