JPS57106164A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57106164A
JPS57106164A JP55181985A JP18198580A JPS57106164A JP S57106164 A JPS57106164 A JP S57106164A JP 55181985 A JP55181985 A JP 55181985A JP 18198580 A JP18198580 A JP 18198580A JP S57106164 A JPS57106164 A JP S57106164A
Authority
JP
Japan
Prior art keywords
type
annular region
protective diode
mosfet
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55181985A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Mitsuo Ito
Shigeo Otaka
Kazutoshi Ashikawa
Tetsuo Iijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55181985A priority Critical patent/JPS57106164A/en
Publication of JPS57106164A publication Critical patent/JPS57106164A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To prevent a thyristor performance in an input protective diode by forming a high concentration annular region of the same conductive type as a substrate around the protective diode and connecting the annular region to the source of an MOSFET. CONSTITUTION:The P<+> type source and drain regions 2, 3 and a gate 4 of the MOSFET are shaped to the N type Si substrate 1. The protective diode is formed by a P type region 5 and N<+> regions 6, 7, the circumference is surrounded by an N<+> type annular region 8, and an electrode C of the annular region and a source electrode S are connected. The thyristor performance between the protective diode and the MOSFET does not appear because the N<+> type annular ring 7 is not shaped. A deep P<+> type annular region 9 surrounding the diode may be formed into the annular region as necessary.
JP55181985A 1980-12-24 1980-12-24 Semiconductor device Pending JPS57106164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55181985A JPS57106164A (en) 1980-12-24 1980-12-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55181985A JPS57106164A (en) 1980-12-24 1980-12-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57106164A true JPS57106164A (en) 1982-07-01

Family

ID=16110301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55181985A Pending JPS57106164A (en) 1980-12-24 1980-12-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57106164A (en)

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