JPS5487488A - Field effect semiconductor device - Google Patents

Field effect semiconductor device

Info

Publication number
JPS5487488A
JPS5487488A JP15577477A JP15577477A JPS5487488A JP S5487488 A JPS5487488 A JP S5487488A JP 15577477 A JP15577477 A JP 15577477A JP 15577477 A JP15577477 A JP 15577477A JP S5487488 A JPS5487488 A JP S5487488A
Authority
JP
Japan
Prior art keywords
region
type
deeper
gate
guard ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15577477A
Other languages
Japanese (ja)
Inventor
Yaichiro Watakabe
Mikio Bessho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15577477A priority Critical patent/JPS5487488A/en
Publication of JPS5487488A publication Critical patent/JPS5487488A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve forward voltage drop characteristics and forward stopping voltage characteristics of a field effect switching thyristor by forming a guard ring region which is of the same conductive type as and deeper than a gate region.
CONSTITUTION: In N--tpe substrate 1, P+-type gate region 2 and N+-type cathode region 3 are formed and on the other surface, N+-type anode region 4 is formed. Then, guard ring region 18 is formed, connecting inegrally in the outer circumference, which is of the same condctive type, namely, (n) type as gate rigion and diffusion depth is deeper than that. Providing guard ring region 18 results in the smaller curvature of depletion layer 19 around gate region 2, a larger forward stopping voltage, and deeper gate region 2, so that the forward voltage drop can be lessened.
COPYRIGHT: (C)1979,JPO&Japio
JP15577477A 1977-12-23 1977-12-23 Field effect semiconductor device Pending JPS5487488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15577477A JPS5487488A (en) 1977-12-23 1977-12-23 Field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15577477A JPS5487488A (en) 1977-12-23 1977-12-23 Field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5487488A true JPS5487488A (en) 1979-07-11

Family

ID=15613106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15577477A Pending JPS5487488A (en) 1977-12-23 1977-12-23 Field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5487488A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929468A (en) * 1982-08-11 1984-02-16 Mitsubishi Electric Corp Electrostatic induction transistor
JPS6276769A (en) * 1985-09-30 1987-04-08 Toyota Central Res & Dev Lab Inc Static induction type thyristor
JPS63156360A (en) * 1986-12-19 1988-06-29 Matsushita Electric Works Ltd Electrostatic induction type semiconductor device
JPH0380568A (en) * 1989-04-25 1991-04-05 Matsushita Electric Works Ltd Electrostatic induction semiconductor device and its manufacture
JPH03244159A (en) * 1990-02-22 1991-10-30 Matsushita Electric Works Ltd Electrostatic induction semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929468A (en) * 1982-08-11 1984-02-16 Mitsubishi Electric Corp Electrostatic induction transistor
JPS6276769A (en) * 1985-09-30 1987-04-08 Toyota Central Res & Dev Lab Inc Static induction type thyristor
JPS63156360A (en) * 1986-12-19 1988-06-29 Matsushita Electric Works Ltd Electrostatic induction type semiconductor device
JPH0380568A (en) * 1989-04-25 1991-04-05 Matsushita Electric Works Ltd Electrostatic induction semiconductor device and its manufacture
JPH03244159A (en) * 1990-02-22 1991-10-30 Matsushita Electric Works Ltd Electrostatic induction semiconductor device

Similar Documents

Publication Publication Date Title
JPS5539619A (en) Thyristor
JPS5598858A (en) Gate turn-off thyristor
JPS5487488A (en) Field effect semiconductor device
JPS55102267A (en) Semiconductor control element
JPS5473585A (en) Gate turn-off thyristor
JPS546480A (en) Semiconductor device
JPS54112182A (en) Semiconductor device
JPS5588372A (en) Lateral type transistor
JPS5269281A (en) Gate turn-off thyristor
JPS54112189A (en) Mesa semiconductor device
JPS6442858A (en) Metal semiconductor junction diode and manufacture thereof
JPS54113275A (en) Semiconductor device
JPS5563879A (en) Semiconductor device
JPS54102980A (en) Mos-type semiconductor device and its manufacture
JPS5460869A (en) Reverse conducting thyristor
JPS539485A (en) Mesa type semiconductor device
JPS55127066A (en) Manufacture of reverse-conductive thyristor
JPS5423375A (en) Manufacture of schottky barrier type electrode
JPS5367373A (en) Semiconductor device
JPS54113274A (en) Semiconductor control rectifier
JPS548985A (en) Semiconductor device
JPS54121075A (en) Thyristor
JPS526097A (en) Planar type photodiode
JPS558060A (en) Thyristor
JPS54161891A (en) Field effect transistor