JPS54112189A - Mesa semiconductor device - Google Patents

Mesa semiconductor device

Info

Publication number
JPS54112189A
JPS54112189A JP2010778A JP2010778A JPS54112189A JP S54112189 A JPS54112189 A JP S54112189A JP 2010778 A JP2010778 A JP 2010778A JP 2010778 A JP2010778 A JP 2010778A JP S54112189 A JPS54112189 A JP S54112189A
Authority
JP
Japan
Prior art keywords
junction
layer
substrate
mesa
bevel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010778A
Other languages
Japanese (ja)
Inventor
Kazuhisa Takahashi
Saburo Takamiya
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010778A priority Critical patent/JPS54112189A/en
Publication of JPS54112189A publication Critical patent/JPS54112189A/en
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain uniform breakdown characteristics with a breakdown voltage at a junction circumference made higher than that at a junction center by making acute an angle contained by a PN junction, formed of a semiconductor layer and diffusion layer, and the surface of the semiconductor layer and by covering the surface exposure part of this junction with an insulating film.
CONSTITUTION: On unidirectionally-conductive type semiconductor substrate 1, reversely conductive layer 2 is formed and in the fixed region of this surface, region 3 of the same reversely-conduction type as layer 2 and of low resistivity is formed. Onto the mesa bevel, diffusion region 4 of the same unidirectional conduction type as substrate 1 is provided and the exposed surface of layer 2 is covered with insulating film 5. In this way, 1st PN junction surface 6 is made between substrate 1 and layer 2, and 2nd PN junction surface 7 between layer 4 and substrate 2. In this constitution, angle (α) contained by junction surface 6 and the mesa bevel is made obtuse, and angle (β) by junction surface 7 and the surface is acute. As a result, a breakdown voltage at a part even close to the intersection between the mesa bevel and surface is made higher than that at the junction center part, so that uniform breakdown characteristics can be obtained over the entire junction.
COPYRIGHT: (C)1979,JPO&Japio
JP2010778A 1978-02-22 1978-02-22 Mesa semiconductor device Granted JPS54112189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010778A JPS54112189A (en) 1978-02-22 1978-02-22 Mesa semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010778A JPS54112189A (en) 1978-02-22 1978-02-22 Mesa semiconductor device

Publications (1)

Publication Number Publication Date
JPS54112189A true JPS54112189A (en) 1979-09-01

Family

ID=12017883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010778A Granted JPS54112189A (en) 1978-02-22 1978-02-22 Mesa semiconductor device

Country Status (1)

Country Link
JP (1) JPS54112189A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125671A (en) * 1979-03-22 1980-09-27 Shindengen Electric Mfg Co Ltd High withstand voltage semiconductor device
JPS5773983A (en) * 1980-10-27 1982-05-08 Nec Corp Semiconductor photodetector
WO2008136409A1 (en) * 2007-04-26 2008-11-13 The Kansai Electric Power Co., Inc. Silicon carbide zener diode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125671A (en) * 1979-03-22 1980-09-27 Shindengen Electric Mfg Co Ltd High withstand voltage semiconductor device
JPS5773983A (en) * 1980-10-27 1982-05-08 Nec Corp Semiconductor photodetector
JPH0258792B2 (en) * 1980-10-27 1990-12-10 Nippon Electric Co
WO2008136409A1 (en) * 2007-04-26 2008-11-13 The Kansai Electric Power Co., Inc. Silicon carbide zener diode
US8093599B2 (en) 2007-04-26 2012-01-10 Central Research Institute Of Electric Power Industry Silicon carbide Zener diode

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