JPS54112189A - Mesa semiconductor device - Google Patents
Mesa semiconductor deviceInfo
- Publication number
- JPS54112189A JPS54112189A JP2010778A JP2010778A JPS54112189A JP S54112189 A JPS54112189 A JP S54112189A JP 2010778 A JP2010778 A JP 2010778A JP 2010778 A JP2010778 A JP 2010778A JP S54112189 A JPS54112189 A JP S54112189A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- layer
- substrate
- mesa
- bevel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 230000001154 acute Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
Abstract
PURPOSE: To obtain uniform breakdown characteristics with a breakdown voltage at a junction circumference made higher than that at a junction center by making acute an angle contained by a PN junction, formed of a semiconductor layer and diffusion layer, and the surface of the semiconductor layer and by covering the surface exposure part of this junction with an insulating film.
CONSTITUTION: On unidirectionally-conductive type semiconductor substrate 1, reversely conductive layer 2 is formed and in the fixed region of this surface, region 3 of the same reversely-conduction type as layer 2 and of low resistivity is formed. Onto the mesa bevel, diffusion region 4 of the same unidirectional conduction type as substrate 1 is provided and the exposed surface of layer 2 is covered with insulating film 5. In this way, 1st PN junction surface 6 is made between substrate 1 and layer 2, and 2nd PN junction surface 7 between layer 4 and substrate 2. In this constitution, angle (α) contained by junction surface 6 and the mesa bevel is made obtuse, and angle (β) by junction surface 7 and the surface is acute. As a result, a breakdown voltage at a part even close to the intersection between the mesa bevel and surface is made higher than that at the junction center part, so that uniform breakdown characteristics can be obtained over the entire junction.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010778A JPS54112189A (en) | 1978-02-22 | 1978-02-22 | Mesa semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010778A JPS54112189A (en) | 1978-02-22 | 1978-02-22 | Mesa semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54112189A true JPS54112189A (en) | 1979-09-01 |
Family
ID=12017883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010778A Granted JPS54112189A (en) | 1978-02-22 | 1978-02-22 | Mesa semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54112189A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55125671A (en) * | 1979-03-22 | 1980-09-27 | Shindengen Electric Mfg Co Ltd | High withstand voltage semiconductor device |
| JPS5773983A (en) * | 1980-10-27 | 1982-05-08 | Nec Corp | Semiconductor photodetector |
| WO2008136409A1 (en) * | 2007-04-26 | 2008-11-13 | The Kansai Electric Power Co., Inc. | Silicon carbide zener diode |
-
1978
- 1978-02-22 JP JP2010778A patent/JPS54112189A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55125671A (en) * | 1979-03-22 | 1980-09-27 | Shindengen Electric Mfg Co Ltd | High withstand voltage semiconductor device |
| JPS5773983A (en) * | 1980-10-27 | 1982-05-08 | Nec Corp | Semiconductor photodetector |
| JPH0258792B2 (en) * | 1980-10-27 | 1990-12-10 | Nippon Electric Co | |
| WO2008136409A1 (en) * | 2007-04-26 | 2008-11-13 | The Kansai Electric Power Co., Inc. | Silicon carbide zener diode |
| US8093599B2 (en) | 2007-04-26 | 2012-01-10 | Central Research Institute Of Electric Power Industry | Silicon carbide Zener diode |
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