JPS54161891A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS54161891A JPS54161891A JP7113578A JP7113578A JPS54161891A JP S54161891 A JPS54161891 A JP S54161891A JP 7113578 A JP7113578 A JP 7113578A JP 7113578 A JP7113578 A JP 7113578A JP S54161891 A JPS54161891 A JP S54161891A
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrode
- gate
- type
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To secure an assured gate function as well as to increase the dielectric strength by forming the drain region constituting the J-FET within the semiconductor substrate more deeply than the gate region and thus suppressing the air depletion layer extending into the drain region.
CONSTITUTION: P+-type region 7 is formed by diffusion on the back of P-type semiconductor substrate 6 to be used as the gate region with attachment of gate electrode G2. And N+-type source and drain regions 9 and 10 going deep into substrate 6 are formed by diffusion on the surface of the substrate with attachment of source electrode S and drain electrode D each. Then shallow N-type region 8 is formed by diffusion on the surface of substrate 6 excluding region 9 and 10, and furthermore shallower P+-type gate region 11 is provided within region 8 between region 9 and 10 with attachment of gate electrode G1. In such constitution, electrode S is earthed with electrode D applied with the positive voltage along with electrode G1 and G2 applied with the negative voltage respectively. As a result, the gate function becomes assured near the surface of the N+N junction due to the effect in that the depletion layer does not extend into region 10 air particularly.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7113578A JPS54161891A (en) | 1978-06-12 | 1978-06-12 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7113578A JPS54161891A (en) | 1978-06-12 | 1978-06-12 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54161891A true JPS54161891A (en) | 1979-12-21 |
Family
ID=13451824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7113578A Pending JPS54161891A (en) | 1978-06-12 | 1978-06-12 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54161891A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005340739A (en) * | 2004-05-31 | 2005-12-08 | Matsushita Electric Ind Co Ltd | Switching circuit and semiconductor device |
-
1978
- 1978-06-12 JP JP7113578A patent/JPS54161891A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005340739A (en) * | 2004-05-31 | 2005-12-08 | Matsushita Electric Ind Co Ltd | Switching circuit and semiconductor device |
JP4559772B2 (en) * | 2004-05-31 | 2010-10-13 | パナソニック株式会社 | Switch circuit |
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