JPS5698876A - Junction type fet - Google Patents

Junction type fet

Info

Publication number
JPS5698876A
JPS5698876A JP53780A JP53780A JPS5698876A JP S5698876 A JPS5698876 A JP S5698876A JP 53780 A JP53780 A JP 53780A JP 53780 A JP53780 A JP 53780A JP S5698876 A JPS5698876 A JP S5698876A
Authority
JP
Japan
Prior art keywords
region
substrate
type
regions
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP53780A
Other languages
Japanese (ja)
Inventor
Kiyoto Matsumoto
Osamu Nishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP53780A priority Critical patent/JPS5698876A/en
Priority to GB8100182A priority patent/GB2069236B/en
Publication of JPS5698876A publication Critical patent/JPS5698876A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Abstract

PURPOSE: To prevent the increase of excessive gate reverse current, by letting at least the drain region border on the substrate, when the source and drain regions are formed in the island regions on the semiconductor substrate.
CONSTITUTION: On the P type semiconductor substrate 11, the N type layer 12 is grown, and the island layer 12 is formed on the P+ type region on the substrate. In the island layer 12, the P+ type gate region 13 and the N+ type source region 14 and drain region 15 each surrounding the region 13 are respectively diffusion- formed. In this formation, of the regions 14 and 15, at least the region 15 borders on the substrate 12, and corresponding to this at the reverse surface of the substrate 11 the electrode is mounted. The electrons 20 that in the channel part 30 between the regions 14 and 15 proceed through the depletion layer 10 come into the region 15 vertically, resulting in the weaker field around the drain. Thus excessive gate reverse current becomes the less and the properties of the J-FET becomes the higher.
COPYRIGHT: (C)1981,JPO&Japio
JP53780A 1980-01-09 1980-01-09 Junction type fet Pending JPS5698876A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP53780A JPS5698876A (en) 1980-01-09 1980-01-09 Junction type fet
GB8100182A GB2069236B (en) 1980-01-09 1981-01-06 Junction gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53780A JPS5698876A (en) 1980-01-09 1980-01-09 Junction type fet

Publications (1)

Publication Number Publication Date
JPS5698876A true JPS5698876A (en) 1981-08-08

Family

ID=11476495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53780A Pending JPS5698876A (en) 1980-01-09 1980-01-09 Junction type fet

Country Status (2)

Country Link
JP (1) JPS5698876A (en)
GB (1) GB2069236B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005146501A (en) * 2003-11-14 2005-06-09 Mas Fab Rieter Ag Combing cylinder with outfitting element
JP2015079940A (en) * 2013-10-16 2015-04-23 アナログ デバイシス テクノロジー Improved junction field effect transistor, and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005146501A (en) * 2003-11-14 2005-06-09 Mas Fab Rieter Ag Combing cylinder with outfitting element
JP2015079940A (en) * 2013-10-16 2015-04-23 アナログ デバイシス テクノロジー Improved junction field effect transistor, and method of manufacturing the same
US9202934B2 (en) 2013-10-16 2015-12-01 Analog Devices Global Junction field effect transistor, and method of manufacture thereof

Also Published As

Publication number Publication date
GB2069236A (en) 1981-08-19
GB2069236B (en) 1984-05-23

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