JPS5418684A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5418684A
JPS5418684A JP8293177A JP8293177A JPS5418684A JP S5418684 A JPS5418684 A JP S5418684A JP 8293177 A JP8293177 A JP 8293177A JP 8293177 A JP8293177 A JP 8293177A JP S5418684 A JPS5418684 A JP S5418684A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
drain
enhance
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8293177A
Other languages
Japanese (ja)
Other versions
JPS6025028B2 (en
Inventor
Yoshiaki Kamigaki
Kiyoo Ito
Hideo Sunami
Yoshifumi Kawamoto
Yuji Tanida
Mitsumasa Koyanagi
Shoichi Mizuo
Tetsukazu Hashimoto
Susumu Muramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP52082931A priority Critical patent/JPS6025028B2/en
Publication of JPS5418684A publication Critical patent/JPS5418684A/en
Publication of JPS6025028B2 publication Critical patent/JPS6025028B2/en
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To increase the drain dielectric strength as well as to enhance the channel length dependence of the threshold voltage by securing previously a difference of the impurity density distribution and the diffusion depth between the source region and the drain region which are formed within the semiconductor substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP52082931A 1977-07-13 1977-07-13 Manufacturing method of semiconductor device Expired JPS6025028B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52082931A JPS6025028B2 (en) 1977-07-13 1977-07-13 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52082931A JPS6025028B2 (en) 1977-07-13 1977-07-13 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5418684A true JPS5418684A (en) 1979-02-10
JPS6025028B2 JPS6025028B2 (en) 1985-06-15

Family

ID=13787969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52082931A Expired JPS6025028B2 (en) 1977-07-13 1977-07-13 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6025028B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180A (en) * 1981-06-25 1983-01-05 Seiko Epson Corp Manufacturing method for semiconductor device
JPS60501083A (en) * 1983-04-18 1985-07-11 エヌ・シー・アール・インターナショナル・インコーポレイテッド Manufacturing method of semiconductor device
JPS60134465A (en) * 1983-12-23 1985-07-17 Toshiba Corp Manufacture of semiconductor device
JPS60140763A (en) * 1983-12-27 1985-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6267873A (en) * 1985-09-20 1987-03-27 Sony Corp Manufacture of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180020U (en) * 1984-05-04 1985-11-29 関東自動車工業株式会社 Lateral position adjustment device for pedals in vehicles

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114275A (en) * 1974-07-25 1976-02-04 Fujitsu Ltd Handotaisochino seizohoho
JPS5121478A (en) * 1974-08-15 1976-02-20 Nippon Electric Co ZETSUENGEETOGATAHANDOTAISOCHINO SEIZOHOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114275A (en) * 1974-07-25 1976-02-04 Fujitsu Ltd Handotaisochino seizohoho
JPS5121478A (en) * 1974-08-15 1976-02-20 Nippon Electric Co ZETSUENGEETOGATAHANDOTAISOCHINO SEIZOHOHO

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180A (en) * 1981-06-25 1983-01-05 Seiko Epson Corp Manufacturing method for semiconductor device
JPS60501083A (en) * 1983-04-18 1985-07-11 エヌ・シー・アール・インターナショナル・インコーポレイテッド Manufacturing method of semiconductor device
JPS60134465A (en) * 1983-12-23 1985-07-17 Toshiba Corp Manufacture of semiconductor device
JPS60140763A (en) * 1983-12-27 1985-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6267873A (en) * 1985-09-20 1987-03-27 Sony Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6025028B2 (en) 1985-06-15

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