JPS6461953A - Mos transistor - Google Patents

Abstract

PURPOSE:To form a gate without providing an impurity diffusion layer of low concentration and prevent hot carriers from being produced in a depletion layer of a drain junction, by forming the gate such that a gate length is uniform over the whole of the gate and a gate width is wider on the drain side of the gate than on the source side. CONSTITUTION:A gate 1 is formed such that its length l1 is uniform over the whole of the gate 1 and a gate width l2 on the drain 2 side is wider than a gate width l3 on the source 3 side. Hereby, density of an electric field in the vicinity of the junction of the drain 2 is reduced. This is because a junction area on the drain 2 side is increased by making the width of the gate 1 wider on the drain 2 side and hence extension of the depletion layer on the drain 2 side is reduced.