JPS6431471A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6431471A JPS6431471A JP18835987A JP18835987A JPS6431471A JP S6431471 A JPS6431471 A JP S6431471A JP 18835987 A JP18835987 A JP 18835987A JP 18835987 A JP18835987 A JP 18835987A JP S6431471 A JPS6431471 A JP S6431471A
- Authority
- JP
- Japan
- Prior art keywords
- region
- back gate
- channel
- gate region
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To reduce the capacitance between a channel gate region and a back gate region by forming a layer having higher concentration than a dopant concentration of a back gate region at an interval of a predetermined distance from the junction face of a channel region in the back gate region. CONSTITUTION:An epitaxial region 7 made of a p<-> type back gate region 2, an n-channel channel region 3 and a p-type top gate region 4 is formed on a p-type semiconductor substrate 1. A dopant injected layer 5 is formed at a position isolated at a predetermined distance (e.g., 1mum) from a junction face J with the region 3 in the region 2. An SiO2 film 6 is formed on the region 7, and a contact hole is opened at a position corresponding to the regions 2, 3, 4 at the film 6. A back gate electrode 2a, a source electrode 3a, a drain electrode 3b and a top gate electrode 4a are respectively formed at the holes. Here, the concentration of the region 2 is considerably lower value than that of the region 3 to reduce the capacitance between the regions 2 and 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18835987A JPS6431471A (en) | 1987-07-27 | 1987-07-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18835987A JPS6431471A (en) | 1987-07-27 | 1987-07-27 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6431471A true JPS6431471A (en) | 1989-02-01 |
Family
ID=16222242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18835987A Pending JPS6431471A (en) | 1987-07-27 | 1987-07-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6431471A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004112150A1 (en) * | 2003-06-13 | 2004-12-23 | Sumitomo Electric Industries, Ltd. | Field effect transistor |
| JP2009010433A (en) * | 2008-10-16 | 2009-01-15 | Sumitomo Electric Ind Ltd | Lateral junction field effect transistor, and method of manufacturing the same |
| CN103367414A (en) * | 2012-04-09 | 2013-10-23 | 上海华虹Nec电子有限公司 | Structure of vertically pinched-off junction field-effect transistor and manufacturing method thereof |
| US8921903B2 (en) | 2006-12-18 | 2014-12-30 | Sumitomo Electric Industries, Ltd. | Lateral junction field-effect transistor |
-
1987
- 1987-07-27 JP JP18835987A patent/JPS6431471A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004112150A1 (en) * | 2003-06-13 | 2004-12-23 | Sumitomo Electric Industries, Ltd. | Field effect transistor |
| EP1635400A1 (en) * | 2003-06-13 | 2006-03-15 | Sumitomo Electric Industries, Ltd. | Field effect transistor |
| EP1635400A4 (en) * | 2003-06-13 | 2007-09-26 | Sumitomo Electric Industries | Field effect transistor |
| US8921903B2 (en) | 2006-12-18 | 2014-12-30 | Sumitomo Electric Industries, Ltd. | Lateral junction field-effect transistor |
| JP2009010433A (en) * | 2008-10-16 | 2009-01-15 | Sumitomo Electric Ind Ltd | Lateral junction field effect transistor, and method of manufacturing the same |
| CN103367414A (en) * | 2012-04-09 | 2013-10-23 | 上海华虹Nec电子有限公司 | Structure of vertically pinched-off junction field-effect transistor and manufacturing method thereof |
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