JPS6484746A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor device which can be manufactured by a simple process and not only has a large throughput but also is equipped with a polysilicon gate having single conductivity type polarity, by causing the impurity concentration of polysilicon acting as a gate electrode to be more than a specified value and its impurity concentration at source and drain regions to be less than the specified value. CONSTITUTION:At a semiconductor device where its polysilicon gate 6 has single conductivity type polarity, the impurity concentration of polysilicon to be formed as a gate electrode 6 will be more than 5X10<20> atoms/cm<3> and that of source and drain regions will be less than 5X10<20>atoms/cm<3>. For example, polysilicon which is deposited on a glass substrate 1 is patterned by leaving active layer parts 2 of n and p-types ch transistors as it is and a gate insulating film 3 is formed. After that, polysilicon 4 is deposited. PSG 5 is formed on polysilicon 4 and the gate allows polysilicon 4 to become low resistance by diffusion. After that, it is patterned to form the gate electrode 6. Then, PSG 7 is formed at the n-type ch transistor part and after forming PSG 8 on the whole surface, the source and drain regions are formed by diffusion.