JPS6450465A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6450465A JPS6450465A JP62206802A JP20680287A JPS6450465A JP S6450465 A JPS6450465 A JP S6450465A JP 62206802 A JP62206802 A JP 62206802A JP 20680287 A JP20680287 A JP 20680287A JP S6450465 A JPS6450465 A JP S6450465A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- semiconductor
- substrate
- performance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To reduce the cost and to enhance the performance of a semiconductor device, by a method wherein a semiconductor layer formed on a substrate is subjected to impurity diffusion in source and drain regions using the same semiconductor material as that of a gate and leaving the material as an electrode as it is. CONSTITUTION:The surface of a semiconductor layer 2 formed on a substrate 1 is covered with an insulating film 4, removed parts of the film 4 become source, drain regions 5, 6 of a depletion type FET, and a second semiconductor layer 7 containing the same type of impurity as that of the layer 2 in high concentration is deposited on the top. Then, the layer 7 is removed except at least the gate region 4 and the regions 5, 6, and electrodes 13, 14 are formed. Thus, its cost can be reduced, and its performance can be enhanced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206802A JPS6450465A (en) | 1987-08-20 | 1987-08-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206802A JPS6450465A (en) | 1987-08-20 | 1987-08-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450465A true JPS6450465A (en) | 1989-02-27 |
Family
ID=16529336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62206802A Pending JPS6450465A (en) | 1987-08-20 | 1987-08-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450465A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012199563A (en) * | 1999-12-28 | 2012-10-18 | Dpix Llc | Amorphous silicon layer sensor and method of forming sensor |
| JP2015530733A (en) * | 2012-07-26 | 2015-10-15 | 北京京東方光電科技有限公司 | Sensor manufacturing method |
| WO2015163288A1 (en) * | 2014-04-21 | 2015-10-29 | シャープ株式会社 | Light detection device |
-
1987
- 1987-08-20 JP JP62206802A patent/JPS6450465A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012199563A (en) * | 1999-12-28 | 2012-10-18 | Dpix Llc | Amorphous silicon layer sensor and method of forming sensor |
| JP2015530733A (en) * | 2012-07-26 | 2015-10-15 | 北京京東方光電科技有限公司 | Sensor manufacturing method |
| WO2015163288A1 (en) * | 2014-04-21 | 2015-10-29 | シャープ株式会社 | Light detection device |
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