JPS54148384A - Power-use high dielectric strength field effect transistor - Google Patents

Power-use high dielectric strength field effect transistor

Info

Publication number
JPS54148384A
JPS54148384A JP5677778A JP5677778A JPS54148384A JP S54148384 A JPS54148384 A JP S54148384A JP 5677778 A JP5677778 A JP 5677778A JP 5677778 A JP5677778 A JP 5677778A JP S54148384 A JPS54148384 A JP S54148384A
Authority
JP
Japan
Prior art keywords
thickness
layer
dielectric strength
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5677778A
Other languages
Japanese (ja)
Inventor
Ryuichiro Yamamoto
Tsutomu Tsuji
Hitoshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5677778A priority Critical patent/JPS54148384A/en
Publication of JPS54148384A publication Critical patent/JPS54148384A/en
Pending legal-status Critical Current

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  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To secure a high dielectric strength by giving more than double thickness to the drain/source layer of the semiconductor active layer in comparison with the thickness under the gate electrode.
CONSTITUTION: Buffer layer 2 of a low impurity density is formed by the epitaxial growth onto semi-insulated substrate 1, and then a selective etching is given. After this, active layer 3 is epitaxial-grown and a selective etching is given again after fitting of the projections on the surface. Then electrodes 4∼6 are formed for the source, drain and gate each in the conventional way. In this way, the thickness of the buffer layer is reduced under the source/drain layer, and the thickness of the source/drain layer can be formed easily more than double the thickness of the active layer under the gate electrode. As a result, no current flows into the buffer layer, thus increasing the dielectric strength.
COPYRIGHT: (C)1979,JPO&Japio
JP5677778A 1978-05-12 1978-05-12 Power-use high dielectric strength field effect transistor Pending JPS54148384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5677778A JPS54148384A (en) 1978-05-12 1978-05-12 Power-use high dielectric strength field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5677778A JPS54148384A (en) 1978-05-12 1978-05-12 Power-use high dielectric strength field effect transistor

Publications (1)

Publication Number Publication Date
JPS54148384A true JPS54148384A (en) 1979-11-20

Family

ID=13036865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5677778A Pending JPS54148384A (en) 1978-05-12 1978-05-12 Power-use high dielectric strength field effect transistor

Country Status (1)

Country Link
JP (1) JPS54148384A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4709251A (en) * 1984-08-27 1987-11-24 Sumitomo Electric Industries, Ltd. Double Schottky-gate field effect transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535581A (en) * 1976-07-06 1978-01-19 Toshiba Corp Schottky gate type field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535581A (en) * 1976-07-06 1978-01-19 Toshiba Corp Schottky gate type field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4709251A (en) * 1984-08-27 1987-11-24 Sumitomo Electric Industries, Ltd. Double Schottky-gate field effect transistor

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