JPS54148384A - Power-use high dielectric strength field effect transistor - Google Patents
Power-use high dielectric strength field effect transistorInfo
- Publication number
- JPS54148384A JPS54148384A JP5677778A JP5677778A JPS54148384A JP S54148384 A JPS54148384 A JP S54148384A JP 5677778 A JP5677778 A JP 5677778A JP 5677778 A JP5677778 A JP 5677778A JP S54148384 A JPS54148384 A JP S54148384A
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- layer
- dielectric strength
- source
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To secure a high dielectric strength by giving more than double thickness to the drain/source layer of the semiconductor active layer in comparison with the thickness under the gate electrode.
CONSTITUTION: Buffer layer 2 of a low impurity density is formed by the epitaxial growth onto semi-insulated substrate 1, and then a selective etching is given. After this, active layer 3 is epitaxial-grown and a selective etching is given again after fitting of the projections on the surface. Then electrodes 4∼6 are formed for the source, drain and gate each in the conventional way. In this way, the thickness of the buffer layer is reduced under the source/drain layer, and the thickness of the source/drain layer can be formed easily more than double the thickness of the active layer under the gate electrode. As a result, no current flows into the buffer layer, thus increasing the dielectric strength.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5677778A JPS54148384A (en) | 1978-05-12 | 1978-05-12 | Power-use high dielectric strength field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5677778A JPS54148384A (en) | 1978-05-12 | 1978-05-12 | Power-use high dielectric strength field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54148384A true JPS54148384A (en) | 1979-11-20 |
Family
ID=13036865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5677778A Pending JPS54148384A (en) | 1978-05-12 | 1978-05-12 | Power-use high dielectric strength field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54148384A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4709251A (en) * | 1984-08-27 | 1987-11-24 | Sumitomo Electric Industries, Ltd. | Double Schottky-gate field effect transistor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS535581A (en) * | 1976-07-06 | 1978-01-19 | Toshiba Corp | Schottky gate type field effect transistor |
-
1978
- 1978-05-12 JP JP5677778A patent/JPS54148384A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS535581A (en) * | 1976-07-06 | 1978-01-19 | Toshiba Corp | Schottky gate type field effect transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4709251A (en) * | 1984-08-27 | 1987-11-24 | Sumitomo Electric Industries, Ltd. | Double Schottky-gate field effect transistor |
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