JPS5574182A - Preparing junction type field effect transistor - Google Patents

Preparing junction type field effect transistor

Info

Publication number
JPS5574182A
JPS5574182A JP14835678A JP14835678A JPS5574182A JP S5574182 A JPS5574182 A JP S5574182A JP 14835678 A JP14835678 A JP 14835678A JP 14835678 A JP14835678 A JP 14835678A JP S5574182 A JPS5574182 A JP S5574182A
Authority
JP
Japan
Prior art keywords
area
gate
polycrystalline
type impurity
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14835678A
Other languages
Japanese (ja)
Other versions
JPS6157714B2 (en
Inventor
Kosuke Yasuno
Tatsunori Nakajima
Kazutoshi Nagano
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14835678A priority Critical patent/JPS5574182A/en
Publication of JPS5574182A publication Critical patent/JPS5574182A/en
Publication of JPS6157714B2 publication Critical patent/JPS6157714B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To prevent withstand voltage property from deterioration by forming well through polycrystalline semiconductor formed on the semiconductor substrate.
CONSTITUTION: Polycrystalline Si 7 is formed on p-type Si semiconductor substrate 7. Using mask of SiO2 8, etc., n-type impurity is selectively introduced to form n- well 9. Then, oxidation-inhibiting film 10 is selectively formed on the area which will later form the source, drain, and gate. This is oxidized at a low temperature to form SiO27' to allow the polycrystalline Si to be subdevided into 7a∼7c. Diffusion mask film 11 is selectively formed on the surface of the area later becoming the gate. This is used for selective duffusion of n-type impurity through the film 7b, 7c to form the source area 12 and the drain area 13. p-Type impurity is selectively introduced to the area to be later used as gate to form the gate area 14. Metal electrodes 15∼17 are formed on the areas 12, 13 and substrate 6. This permits high concentration area of n-well 9 surface to be located within the polycrystalline Si7 and thus is effective in preventing withstand voltage reduction and capacitance increase.
COPYRIGHT: (C)1980,JPO&Japio
JP14835678A 1978-11-29 1978-11-29 Preparing junction type field effect transistor Granted JPS5574182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14835678A JPS5574182A (en) 1978-11-29 1978-11-29 Preparing junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14835678A JPS5574182A (en) 1978-11-29 1978-11-29 Preparing junction type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5574182A true JPS5574182A (en) 1980-06-04
JPS6157714B2 JPS6157714B2 (en) 1986-12-08

Family

ID=15450916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14835678A Granted JPS5574182A (en) 1978-11-29 1978-11-29 Preparing junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5574182A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756976A (en) * 1980-09-22 1982-04-05 Nec Corp Manufacture of junction type field effect transistor
US5248626A (en) * 1992-08-28 1993-09-28 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating self-aligned gate diffused junction field effect transistor
JPH0613410A (en) * 1992-03-18 1994-01-21 Samsung Electron Co Ltd Junction field-effect transistor and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382275A (en) * 1976-12-28 1978-07-20 Fujitsu Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382275A (en) * 1976-12-28 1978-07-20 Fujitsu Ltd Production of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756976A (en) * 1980-09-22 1982-04-05 Nec Corp Manufacture of junction type field effect transistor
JPH0613410A (en) * 1992-03-18 1994-01-21 Samsung Electron Co Ltd Junction field-effect transistor and manufacture thereof
US5248626A (en) * 1992-08-28 1993-09-28 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating self-aligned gate diffused junction field effect transistor

Also Published As

Publication number Publication date
JPS6157714B2 (en) 1986-12-08

Similar Documents

Publication Publication Date Title
JPS5591877A (en) Manufacture of semiconductor device
JPS5358779A (en) Junction type field effect transistor
JPS5574182A (en) Preparing junction type field effect transistor
JPS5559759A (en) Semiconductor device
JPS57155777A (en) Mos transistor
JPS5588378A (en) Semiconductor device
JPS5572069A (en) Semiconductor device
JPS554964A (en) Manufacture of mos type semiconductor
JPS5583267A (en) Method of fabricating semiconductor device
JPS5556663A (en) Insulating-gate type field-effect transistor
JPS5478673A (en) Manufacture of complementary insulator gate field effect transistor
JPS54139488A (en) Mos semiconductor element and its manufacture
JPS54139490A (en) Semiconductor memory unit
JPS54161889A (en) Insulated gate type field effect transistor
JPS5586163A (en) Mis semiconductor device
JPS54121071A (en) Insulator gate type field effect semiconductor device
JPS54154979A (en) Manufacture of insulated gate type semiconductor device
JPS54146976A (en) Junction type field effect transistor and its production
JPS5286086A (en) Field effect transistor
JPS54121081A (en) Integrated circuit device
JPS5360181A (en) Production of mos type field effect transistor
JPS54100269A (en) Semiconductor device
JPS5346287A (en) Production of semiconductor integrated circuit
JPS54114085A (en) Semiconductor device
JPS55113324A (en) Manufacture of semiconductor device