JPS54105983A - Lateral field effect transistor - Google Patents
Lateral field effect transistorInfo
- Publication number
- JPS54105983A JPS54105983A JP1307978A JP1307978A JPS54105983A JP S54105983 A JPS54105983 A JP S54105983A JP 1307978 A JP1307978 A JP 1307978A JP 1307978 A JP1307978 A JP 1307978A JP S54105983 A JPS54105983 A JP S54105983A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- interface
- channel
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To ensure the steady operational property as well as to increase the gain by forming the center part of the active layer into plural number of belt forms with the gate electrodes formed on the upper and both surfaces and thus growing the conductive channel at the region which is distant away from the interface of the insulating substrate positioning at the area under the active layer.
CONSTITUTION: The active layer is formed on the insulating substrate to obtain lateral FET of the N-channel Schottky barrier gate type. In this case, active layer 3a is divided into plural number of belts via groove 11. Then continuous gate electrode 6a is coated on the surface and the side of layer 3a as well as on exposed substrate 2 to grow depletion layer 9a and conductive channel 10a within projected layer 3a. With application of the negative voltage to electrode 6a of such constitution, the interface between substrate 2 and layer 3a can be depleted with the low gate voltage since the interface is the transit region of the impurity density. Thus, channel 10a is caused perfectly within layer 3a, ensuring the steady action property.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1307978A JPS54105983A (en) | 1978-02-07 | 1978-02-07 | Lateral field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1307978A JPS54105983A (en) | 1978-02-07 | 1978-02-07 | Lateral field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54105983A true JPS54105983A (en) | 1979-08-20 |
Family
ID=11823149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1307978A Pending JPS54105983A (en) | 1978-02-07 | 1978-02-07 | Lateral field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54105983A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5771184A (en) * | 1980-10-22 | 1982-05-01 | Mitsubishi Electric Corp | Manufacture of field effect transistor |
-
1978
- 1978-02-07 JP JP1307978A patent/JPS54105983A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5771184A (en) * | 1980-10-22 | 1982-05-01 | Mitsubishi Electric Corp | Manufacture of field effect transistor |
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