JPS54105983A - Lateral field effect transistor - Google Patents

Lateral field effect transistor

Info

Publication number
JPS54105983A
JPS54105983A JP1307978A JP1307978A JPS54105983A JP S54105983 A JPS54105983 A JP S54105983A JP 1307978 A JP1307978 A JP 1307978A JP 1307978 A JP1307978 A JP 1307978A JP S54105983 A JPS54105983 A JP S54105983A
Authority
JP
Japan
Prior art keywords
layer
active layer
interface
channel
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1307978A
Other languages
Japanese (ja)
Inventor
Michihiro Kobiki
Michio Kotani
Saburo Takamiya
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1307978A priority Critical patent/JPS54105983A/en
Publication of JPS54105983A publication Critical patent/JPS54105983A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To ensure the steady operational property as well as to increase the gain by forming the center part of the active layer into plural number of belt forms with the gate electrodes formed on the upper and both surfaces and thus growing the conductive channel at the region which is distant away from the interface of the insulating substrate positioning at the area under the active layer.
CONSTITUTION: The active layer is formed on the insulating substrate to obtain lateral FET of the N-channel Schottky barrier gate type. In this case, active layer 3a is divided into plural number of belts via groove 11. Then continuous gate electrode 6a is coated on the surface and the side of layer 3a as well as on exposed substrate 2 to grow depletion layer 9a and conductive channel 10a within projected layer 3a. With application of the negative voltage to electrode 6a of such constitution, the interface between substrate 2 and layer 3a can be depleted with the low gate voltage since the interface is the transit region of the impurity density. Thus, channel 10a is caused perfectly within layer 3a, ensuring the steady action property.
COPYRIGHT: (C)1979,JPO&Japio
JP1307978A 1978-02-07 1978-02-07 Lateral field effect transistor Pending JPS54105983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1307978A JPS54105983A (en) 1978-02-07 1978-02-07 Lateral field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1307978A JPS54105983A (en) 1978-02-07 1978-02-07 Lateral field effect transistor

Publications (1)

Publication Number Publication Date
JPS54105983A true JPS54105983A (en) 1979-08-20

Family

ID=11823149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1307978A Pending JPS54105983A (en) 1978-02-07 1978-02-07 Lateral field effect transistor

Country Status (1)

Country Link
JP (1) JPS54105983A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771184A (en) * 1980-10-22 1982-05-01 Mitsubishi Electric Corp Manufacture of field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771184A (en) * 1980-10-22 1982-05-01 Mitsubishi Electric Corp Manufacture of field effect transistor

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