JPS5726472A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5726472A
JPS5726472A JP10181680A JP10181680A JPS5726472A JP S5726472 A JPS5726472 A JP S5726472A JP 10181680 A JP10181680 A JP 10181680A JP 10181680 A JP10181680 A JP 10181680A JP S5726472 A JPS5726472 A JP S5726472A
Authority
JP
Japan
Prior art keywords
layer
electrode
electron
shielding
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10181680A
Other languages
Japanese (ja)
Other versions
JPS6353705B2 (en
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10181680A priority Critical patent/JPS5726472A/en
Publication of JPS5726472A publication Critical patent/JPS5726472A/en
Publication of JPS6353705B2 publication Critical patent/JPS6353705B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To remarkably improve the controlling characteristics of a control electrode by forming a completely depleted electron shielding layer for shielding the mobility of the electrons between a channel layer and the control electrode. CONSTITUTION:In an FET having an insulating substrate 1, a buffer layer 2, an n type conductive electron supply layer 3, a channel layer 4, a control electrode 5, source and drain electrodes 9, 10, an electron shielding layer 8 for shielding the mobility of electrons is formed between the layer 4 and the electrode. This layer 8 has n type conductivity, and the thickness is determined by the conditions that the layer 8 is completely depleted by the surface level of the electrode 5 and the electron is not remained in the conductive band. Thus, the electrons supplied from the layer 3 to the layer 4 are not moved to the boundary with the electrode 5, but the electron density in the electron storage layer in the layer 4 can be secured. Thus, the thickness of the layer 4 can be extremely reduced, and since the electrostatic capacity between the electrode 5 and the electron storage layer can be increased, the controlling characteristics of the electrode 5 can be largely improved.
JP10181680A 1980-07-24 1980-07-24 Semiconductor device Granted JPS5726472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10181680A JPS5726472A (en) 1980-07-24 1980-07-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10181680A JPS5726472A (en) 1980-07-24 1980-07-24 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5726472A true JPS5726472A (en) 1982-02-12
JPS6353705B2 JPS6353705B2 (en) 1988-10-25

Family

ID=14310642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10181680A Granted JPS5726472A (en) 1980-07-24 1980-07-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5726472A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041262A (en) * 1983-08-16 1985-03-04 Oki Electric Ind Co Ltd Semiconductor device
JPS60223171A (en) * 1984-04-19 1985-11-07 Nec Corp Field-effect transistor
JPS60231366A (en) * 1984-04-28 1985-11-16 Agency Of Ind Science & Technol Field effect transistor
JPS6123364A (en) * 1984-07-11 1986-01-31 Agency Of Ind Science & Technol Field effect transistor
JPS6143480A (en) * 1984-08-08 1986-03-03 Agency Of Ind Science & Technol Field effect transistor
JPS6196769A (en) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol Field effect transistor
JPS61280674A (en) * 1985-06-06 1986-12-11 Nec Corp Semiconductor device
EP0514079A2 (en) * 1991-05-09 1992-11-19 Raytheon Company High electron mobility transistor and method of manufacture

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041262A (en) * 1983-08-16 1985-03-04 Oki Electric Ind Co Ltd Semiconductor device
JPS60223171A (en) * 1984-04-19 1985-11-07 Nec Corp Field-effect transistor
JPH0783107B2 (en) * 1984-04-19 1995-09-06 日本電気株式会社 Field effect transistor
JPS60231366A (en) * 1984-04-28 1985-11-16 Agency Of Ind Science & Technol Field effect transistor
JPS6123364A (en) * 1984-07-11 1986-01-31 Agency Of Ind Science & Technol Field effect transistor
JPS6143480A (en) * 1984-08-08 1986-03-03 Agency Of Ind Science & Technol Field effect transistor
JPS6196769A (en) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol Field effect transistor
JPS61280674A (en) * 1985-06-06 1986-12-11 Nec Corp Semiconductor device
EP0514079A2 (en) * 1991-05-09 1992-11-19 Raytheon Company High electron mobility transistor and method of manufacture

Also Published As

Publication number Publication date
JPS6353705B2 (en) 1988-10-25

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