JPS5778172A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS5778172A
JPS5778172A JP15388880A JP15388880A JPS5778172A JP S5778172 A JPS5778172 A JP S5778172A JP 15388880 A JP15388880 A JP 15388880A JP 15388880 A JP15388880 A JP 15388880A JP S5778172 A JPS5778172 A JP S5778172A
Authority
JP
Japan
Prior art keywords
cathode
base layer
type
layer
emitter layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15388880A
Other languages
Japanese (ja)
Inventor
Takahiro Nagano
Tsutomu Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15388880A priority Critical patent/JPS5778172A/en
Publication of JPS5778172A publication Critical patent/JPS5778172A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Abstract

PURPOSE:To obtain a thyristor having large maximum shut-off current by reducing the thickness of the center of a cathode-emitter layer forming a thyristor thinner than that at the periphery and forming a density peak higher than the impurity in the surface of a base layer adjacent to the cathode-emitter layer in the prescribed position in the base layer. CONSTITUTION:A semiconductor substrate 1 is formed of a P type anode-emitter layer 2, an N type base layer 3, a P type base layer 4 and N type cathode-emitter layer 5 made of center portion 51 and peripheral portion 52. The layer 2 is ohmically contacted with the anode electrode 6 formed on the lower main surface together with N<+> type shortcircuit layers 31, 32 exposed on the lower main surface, and a control electrode 7 and a cathode electrode 8 are respectively formed at the layers 4, 5. In this structure, WnEC<WnEP is set, where the WnEC represents the thickness of the center 51 of the cathode-emitter layer 5, and the WnEP represents the thickness of the periphery 52, the peak impurity density of the base layer exists in the interior from the surface, and the position XP is defined in the relationship of WnEC<XP<WnEP.
JP15388880A 1980-11-04 1980-11-04 Gate turn-off thyristor Pending JPS5778172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15388880A JPS5778172A (en) 1980-11-04 1980-11-04 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15388880A JPS5778172A (en) 1980-11-04 1980-11-04 Gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS5778172A true JPS5778172A (en) 1982-05-15

Family

ID=15572301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15388880A Pending JPS5778172A (en) 1980-11-04 1980-11-04 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5778172A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952875A (en) * 1982-09-20 1984-03-27 Mitsubishi Electric Corp Gate turn off thyristor
JPS5986262A (en) * 1982-11-08 1984-05-18 Mitsubishi Electric Corp Gate turn-off thyristor
EP0147776A2 (en) * 1983-12-19 1985-07-10 Hitachi, Ltd. Semiconductor device provided with control electrode
US4609933A (en) * 1983-11-30 1986-09-02 Mitsubishi Denki Kabushiki Kaisha Gate turn-off thyristor having P+ gate and emitter
US4646122A (en) * 1983-03-11 1987-02-24 Hitachi, Ltd. Semiconductor device with floating remote gate turn-off means
JPS62141773A (en) * 1985-12-16 1987-06-25 Fuji Electric Co Ltd Gate turn off (gto) thyristor
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor
EP0631321A1 (en) * 1993-06-22 1994-12-28 Hitachi, Ltd. Gate turn-off thyristor
US5381026A (en) * 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor
US5491351A (en) * 1993-10-30 1996-02-13 Abb Management Ag Gate turn-off thyristor

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952875A (en) * 1982-09-20 1984-03-27 Mitsubishi Electric Corp Gate turn off thyristor
JPS5986262A (en) * 1982-11-08 1984-05-18 Mitsubishi Electric Corp Gate turn-off thyristor
US4646122A (en) * 1983-03-11 1987-02-24 Hitachi, Ltd. Semiconductor device with floating remote gate turn-off means
US4609933A (en) * 1983-11-30 1986-09-02 Mitsubishi Denki Kabushiki Kaisha Gate turn-off thyristor having P+ gate and emitter
EP0147776A2 (en) * 1983-12-19 1985-07-10 Hitachi, Ltd. Semiconductor device provided with control electrode
US4651189A (en) * 1983-12-19 1987-03-17 Hitachi, Ltd. Semiconductor device provided with electrically floating control electrode
JPS62141773A (en) * 1985-12-16 1987-06-25 Fuji Electric Co Ltd Gate turn off (gto) thyristor
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor
US5381026A (en) * 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor
EP0631321A1 (en) * 1993-06-22 1994-12-28 Hitachi, Ltd. Gate turn-off thyristor
US5554863A (en) * 1993-06-22 1996-09-10 Hitachi, Ltd. Gate turn-off thyristor
US5491351A (en) * 1993-10-30 1996-02-13 Abb Management Ag Gate turn-off thyristor

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