JPS5691477A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS5691477A
JPS5691477A JP16867279A JP16867279A JPS5691477A JP S5691477 A JPS5691477 A JP S5691477A JP 16867279 A JP16867279 A JP 16867279A JP 16867279 A JP16867279 A JP 16867279A JP S5691477 A JPS5691477 A JP S5691477A
Authority
JP
Japan
Prior art keywords
layer
electrode
active layer
center
series resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16867279A
Other languages
Japanese (ja)
Other versions
JPS6253953B2 (en
Inventor
Hideaki Kozu
Akira Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16867279A priority Critical patent/JPS5691477A/en
Publication of JPS5691477A publication Critical patent/JPS5691477A/en
Publication of JPS6253953B2 publication Critical patent/JPS6253953B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To facilitate integration by preventing the breakdown of the portion between a gate electrode and a drain electrode since series resistance is made layer even if the distance between the electrodes is small by giving the thin portion of an active layer mainly charge over the series resistance. CONSTITUTION:An n type GaAs active layer 22 is formed on a semi-insulated GaAs substrate with a baffer layer 21 placed therebetween. A given portion of the layer 22 is formed thinner than the other portions to serve as thin portion 26. A gate electrode 23 of a metal, e.g. aluminum, for forming the layer 22 and Schottky junction is formed so that the center thereof may come apart from that of the portion 26. A source electrode 24 is formed on the active layer 22 on the side where the center of the electrode 23 is apart from that of the portion 26, and a drain electrode 25 on the opposite side.
JP16867279A 1979-12-25 1979-12-25 Semiconductor Granted JPS5691477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16867279A JPS5691477A (en) 1979-12-25 1979-12-25 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16867279A JPS5691477A (en) 1979-12-25 1979-12-25 Semiconductor

Publications (2)

Publication Number Publication Date
JPS5691477A true JPS5691477A (en) 1981-07-24
JPS6253953B2 JPS6253953B2 (en) 1987-11-12

Family

ID=15872344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16867279A Granted JPS5691477A (en) 1979-12-25 1979-12-25 Semiconductor

Country Status (1)

Country Link
JP (1) JPS5691477A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027170A (en) * 1988-09-30 1991-06-25 Sumitomo Electric Industries, Ltd. Semiconductor device MESFET with upper and lower layers
WO1991013466A1 (en) * 1990-02-20 1991-09-05 Varian Associates, Inc. High electron mobility transistor
JPH04136818U (en) * 1991-03-29 1992-12-21 タツタ電線株式会社 Oil-resistant, chemical-resistant, abrasion-resistant, bend-resistant, flexible cable
JPH04136817U (en) * 1991-03-29 1992-12-21 タツタ電線株式会社 Oil-resistant, chemical-resistant, abrasion-resistant, bend-resistant, flexible cable
JPH0520209U (en) * 1991-06-27 1993-03-12 タツタ電線株式会社 Flex resistance instrumentation cable
JPH0520208U (en) * 1991-06-27 1993-03-12 タツタ電線株式会社 Flex resistance instrumentation cable
JPH0538718U (en) * 1991-09-11 1993-05-25 タツタ電線株式会社 Flex resistance shielded cable
US6426523B1 (en) 1996-10-30 2002-07-30 Nec Corporation Heterojunction field effect transistor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027170A (en) * 1988-09-30 1991-06-25 Sumitomo Electric Industries, Ltd. Semiconductor device MESFET with upper and lower layers
WO1991013466A1 (en) * 1990-02-20 1991-09-05 Varian Associates, Inc. High electron mobility transistor
US5270798A (en) * 1990-02-20 1993-12-14 Varian Associates, Inc. High electron mobility transistor
EP0469136B1 (en) * 1990-02-20 1997-05-07 Varian Associates, Inc. High electron mobility transistor
JPH04136818U (en) * 1991-03-29 1992-12-21 タツタ電線株式会社 Oil-resistant, chemical-resistant, abrasion-resistant, bend-resistant, flexible cable
JPH04136817U (en) * 1991-03-29 1992-12-21 タツタ電線株式会社 Oil-resistant, chemical-resistant, abrasion-resistant, bend-resistant, flexible cable
JPH0520209U (en) * 1991-06-27 1993-03-12 タツタ電線株式会社 Flex resistance instrumentation cable
JPH0520208U (en) * 1991-06-27 1993-03-12 タツタ電線株式会社 Flex resistance instrumentation cable
JPH0538718U (en) * 1991-09-11 1993-05-25 タツタ電線株式会社 Flex resistance shielded cable
US6426523B1 (en) 1996-10-30 2002-07-30 Nec Corporation Heterojunction field effect transistor
US6720200B2 (en) 1996-10-30 2004-04-13 Nec Corporation Field effect transistor and fabrication process thereof

Also Published As

Publication number Publication date
JPS6253953B2 (en) 1987-11-12

Similar Documents

Publication Publication Date Title
JPS5595370A (en) Compound semiconductor field-effect transistor
JPS5691477A (en) Semiconductor
JPS546777A (en) Field effect type transistor
JPS52100979A (en) Production and drive of dual gate schottky barrier gate type fieled ef fect transistor
ATE76222T1 (en) THIN FILM TRANSISTOR.
JPS56155531A (en) Manufacture of semiconductor device
JPS6457680A (en) Compound semiconductor integrated circuit device
JPS5752174A (en) Multigate field effect transistor
JPS5277682A (en) Manufacture of semiconductor device
JPS5766671A (en) Semiconductor device
JPS56112759A (en) Formation of gate electrode
JPS5636159A (en) Schottky diode
JPS55166965A (en) Junction type fet
JPS52114285A (en) Mis type semiconductor device
JPS57187967A (en) Manufacture of semiconductor device
JPS52128078A (en) Manufacture of field effect transistor
JPS55151370A (en) Field effect transistor and fabricating method of the same
JPS57133681A (en) Field-effect semiconductor device
JPS5287990A (en) Semiconductor device
JPS54140881A (en) Semiconductor dvice
JPS5676576A (en) Semiconductor device and manufacture thereof
JPS57169272A (en) Semiconductor device and manufacture thereof
JPS55148422A (en) Manufacturing of semiconductor device
JPS5321581A (en) Production of gaas schottky barrier gate type field effect transistors
JPS6461067A (en) Field-effect transistor and manufacture thereof