JPS52114285A - Mis type semiconductor device - Google Patents

Mis type semiconductor device

Info

Publication number
JPS52114285A
JPS52114285A JP2991976A JP2991976A JPS52114285A JP S52114285 A JPS52114285 A JP S52114285A JP 2991976 A JP2991976 A JP 2991976A JP 2991976 A JP2991976 A JP 2991976A JP S52114285 A JPS52114285 A JP S52114285A
Authority
JP
Japan
Prior art keywords
type semiconductor
mis type
semiconductor device
film
electrode film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2991976A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2991976A priority Critical patent/JPS52114285A/en
Publication of JPS52114285A publication Critical patent/JPS52114285A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce area by forming a first electrode film through and insulating film on a MIS type semiconductor element part, forming further a second electrode film thereon through a dielectric film, and connecting the first electrode film through the openings of the insulating film to source or drain regions. thereby providing a series capacity to the element.
JP2991976A 1976-03-22 1976-03-22 Mis type semiconductor device Pending JPS52114285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2991976A JPS52114285A (en) 1976-03-22 1976-03-22 Mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2991976A JPS52114285A (en) 1976-03-22 1976-03-22 Mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS52114285A true JPS52114285A (en) 1977-09-24

Family

ID=12289395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2991976A Pending JPS52114285A (en) 1976-03-22 1976-03-22 Mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS52114285A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556866A (en) * 1978-06-29 1980-01-18 Nec Corp Semiconductor device
JPS5621358A (en) * 1979-07-30 1981-02-27 Fujitsu Ltd Semiconductor memory device
JPS57120295A (en) * 1981-01-17 1982-07-27 Mitsubishi Electric Corp Semiconductor memory device
JPS61224348A (en) * 1985-03-29 1986-10-06 Toshiba Corp Semiconductor integrated circuit device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556866A (en) * 1978-06-29 1980-01-18 Nec Corp Semiconductor device
JPS5621358A (en) * 1979-07-30 1981-02-27 Fujitsu Ltd Semiconductor memory device
JPS57120295A (en) * 1981-01-17 1982-07-27 Mitsubishi Electric Corp Semiconductor memory device
JPH0415629B2 (en) * 1981-01-17 1992-03-18 Mitsubishi Electric Corp
JPS61224348A (en) * 1985-03-29 1986-10-06 Toshiba Corp Semiconductor integrated circuit device

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