JPS5296875A - Mos type memory device - Google Patents

Mos type memory device

Info

Publication number
JPS5296875A
JPS5296875A JP1305176A JP1305176A JPS5296875A JP S5296875 A JPS5296875 A JP S5296875A JP 1305176 A JP1305176 A JP 1305176A JP 1305176 A JP1305176 A JP 1305176A JP S5296875 A JPS5296875 A JP S5296875A
Authority
JP
Japan
Prior art keywords
memory device
type memory
mos type
loss
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1305176A
Other languages
Japanese (ja)
Other versions
JPS6035829B2 (en
Inventor
Jiro Yamaguchi
Kenichi Inoue
Takashi Shimada
Hidenobu Mochizuki
Koji Otsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP51013051A priority Critical patent/JPS6035829B2/en
Publication of JPS5296875A publication Critical patent/JPS5296875A/en
Publication of JPS6035829B2 publication Critical patent/JPS6035829B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To decrease leakage current and loss and to increase the voltage, by making hold the electric charge on the gate insulating film under a plural number of gate electrodes crossing each other, between the source and drain domain.
JP51013051A 1976-02-09 1976-02-09 memory device Expired JPS6035829B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51013051A JPS6035829B2 (en) 1976-02-09 1976-02-09 memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51013051A JPS6035829B2 (en) 1976-02-09 1976-02-09 memory device

Publications (2)

Publication Number Publication Date
JPS5296875A true JPS5296875A (en) 1977-08-15
JPS6035829B2 JPS6035829B2 (en) 1985-08-16

Family

ID=11822317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51013051A Expired JPS6035829B2 (en) 1976-02-09 1976-02-09 memory device

Country Status (1)

Country Link
JP (1) JPS6035829B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6085155A (en) * 1983-10-13 1985-05-14 理研軽金属工業株式会社 Top beam apparatus for attaching pillar of handrail or fence
JPS62260954A (en) * 1986-04-11 1987-11-13 理研軽金属工業株式会社 Top beam
JPS62260953A (en) * 1986-04-11 1987-11-13 理研軽金属工業株式会社 Top beam
JPS62253856A (en) * 1986-04-25 1987-11-05 株式会社ツヅキ Top beam mount method
JPH0510097Y2 (en) * 1988-03-15 1993-03-12
JPH0544420Y2 (en) * 1988-07-20 1993-11-11
JPH0520827Y2 (en) * 1989-03-24 1993-05-28

Also Published As

Publication number Publication date
JPS6035829B2 (en) 1985-08-16

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