JPS5386178A - Field effect type semiconductor memory device - Google Patents

Field effect type semiconductor memory device

Info

Publication number
JPS5386178A
JPS5386178A JP99277A JP99277A JPS5386178A JP S5386178 A JPS5386178 A JP S5386178A JP 99277 A JP99277 A JP 99277A JP 99277 A JP99277 A JP 99277A JP S5386178 A JPS5386178 A JP S5386178A
Authority
JP
Japan
Prior art keywords
memory device
type semiconductor
semiconductor memory
field effect
effect type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP99277A
Other languages
Japanese (ja)
Inventor
Haruo Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP99277A priority Critical patent/JPS5386178A/en
Publication of JPS5386178A publication Critical patent/JPS5386178A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To make threshold voltage variable and obtain a memory device by changing the charge quantity in gate insulation film through the use of insulated gate type FET.
JP99277A 1977-01-08 1977-01-08 Field effect type semiconductor memory device Pending JPS5386178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP99277A JPS5386178A (en) 1977-01-08 1977-01-08 Field effect type semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP99277A JPS5386178A (en) 1977-01-08 1977-01-08 Field effect type semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5386178A true JPS5386178A (en) 1978-07-29

Family

ID=11489082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP99277A Pending JPS5386178A (en) 1977-01-08 1977-01-08 Field effect type semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5386178A (en)

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