AU1352970A - High voltage insulated gate field effect device - Google Patents

High voltage insulated gate field effect device

Info

Publication number
AU1352970A
AU1352970A AU13529/70A AU1352970A AU1352970A AU 1352970 A AU1352970 A AU 1352970A AU 13529/70 A AU13529/70 A AU 13529/70A AU 1352970 A AU1352970 A AU 1352970A AU 1352970 A AU1352970 A AU 1352970A
Authority
AU
Australia
Prior art keywords
high voltage
field effect
effect device
insulated gate
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU13529/70A
Inventor
MICHAEL SCARLETT; JOSEPH KOCSIS and CHARLES LEWIS STEPHENS ROBERT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of AU1352970A publication Critical patent/AU1352970A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
AU13529/70A 1969-04-28 1970-04-07 High voltage insulated gate field effect device Expired AU1352970A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US81959469A 1969-04-28 1969-04-28
USUS819,594 1969-04-28

Publications (1)

Publication Number Publication Date
AU1352970A true AU1352970A (en) 1971-10-14

Family

ID=25228572

Family Applications (1)

Application Number Title Priority Date Filing Date
AU13529/70A Expired AU1352970A (en) 1969-04-28 1970-04-07 High voltage insulated gate field effect device

Country Status (3)

Country Link
AU (1) AU1352970A (en)
DE (2) DE2019683A1 (en)
FR (1) FR2040299A7 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1338067A (en) * 1970-01-02 1973-11-21 Licentia Gmbh Blocking field effect transistor
JPS49127582A (en) * 1973-04-06 1974-12-06
DE2729656A1 (en) * 1977-06-30 1979-01-11 Siemens Ag FIELD EFFECT TRANSISTOR WITH EXTREMELY SHORT CHANNEL LENGTH
US4651186A (en) * 1981-11-18 1987-03-17 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with improved withstand voltage characteristic

Also Published As

Publication number Publication date
DE7015087U (en) 1973-08-09
FR2040299A7 (en) 1971-01-22
DE2019683A1 (en) 1970-11-05

Similar Documents

Publication Publication Date Title
CA923632A (en) Insulated gate field effect transistor with controlled threshold voltage
AU468595B2 (en) High voltage insulation
AU452187B2 (en) Field effect transistor circuit
AU1352970A (en) High voltage insulated gate field effect device
CA937270A (en) High voltage isolator
CA823845A (en) Insulated gate field effect transistor
CA924091A (en) High voltage insulators
AU415756B2 (en) Insulated gate field effect transistor
CA816938A (en) High-voltage transistor
AU412262B2 (en) Insulated gate type field effect transistor
CA830684A (en) Insulated gate field effect transistor structure with reduced current leakage
AU423705B2 (en) Gate structure for insulated gate field effect transistor
AU445484B2 (en) Field effect transistor of the kind comprising and insulated gate electrode
AU1916767A (en) Insulated gate field effect transistor
AU450419B2 (en) Semiconductor device comprising an insulated gategate field transistor
KR780000208B1 (en) Insulated gate field effect transistor inverted circuit
AU426969B2 (en) Insulated gate field effect transistors
AU2103767A (en) Insulated gate type field effect transistor
CA830686A (en) Field effect transistor
AU462257B2 (en) Field effect transistor
AU433237B2 (en) Field effect transistor
AU410471B2 (en) Insulated gate field effect transistor
AU3926168A (en) Gate structure for insulated gate field effect transistor
CA830675A (en) Semiconductor voltage reference devices
CA848633A (en) Insulated gate field effect transistors