AU1916767A - Insulated gate field effect transistor - Google Patents

Insulated gate field effect transistor

Info

Publication number
AU1916767A
AU1916767A AU19167/67A AU1916767A AU1916767A AU 1916767 A AU1916767 A AU 1916767A AU 19167/67 A AU19167/67 A AU 19167/67A AU 1916767 A AU1916767 A AU 1916767A AU 1916767 A AU1916767 A AU 1916767A
Authority
AU
Australia
Prior art keywords
field effect
effect transistor
insulated gate
gate field
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU19167/67A
Other versions
AU415756B2 (en
Inventor
AKIRA TSUCHITANI and TOSHIO HASEGAWA TOMISABURO OKAMURA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of AU415756B2 publication Critical patent/AU415756B2/en
Publication of AU1916767A publication Critical patent/AU1916767A/en
Expired legal-status Critical Current

Links

AU19167/67A 1966-03-29 1967-03-20 Insulated gate field effect transistor Expired AU415756B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JPJP20212/66 1966-03-29

Publications (2)

Publication Number Publication Date
AU415756B2 AU415756B2 (en) 1968-09-26
AU1916767A true AU1916767A (en) 1968-09-26

Family

ID=

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