AU2103767A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
AU2103767A
AU2103767A AU21037/67A AU2103767A AU2103767A AU 2103767 A AU2103767 A AU 2103767A AU 21037/67 A AU21037/67 A AU 21037/67A AU 2103767 A AU2103767 A AU 2103767A AU 2103767 A AU2103767 A AU 2103767A
Authority
AU
Australia
Prior art keywords
field effect
effect transistor
type field
insulated gate
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU21037/67A
Other versions
AU412262B2 (en
Inventor
Arita Shigeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of AU412262B2 publication Critical patent/AU412262B2/en
Publication of AU2103767A publication Critical patent/AU2103767A/en
Expired legal-status Critical Current

Links

AU21037/67A 1966-05-09 1967-05-01 Insulated gate type field effect transistor Expired AU412262B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JPJP29529/66 1966-05-09

Publications (2)

Publication Number Publication Date
AU412262B2 AU412262B2 (en) 1968-11-07
AU2103767A true AU2103767A (en) 1968-11-07

Family

ID=

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