AU1916367A - Field-effect transistor having insulated gates - Google Patents

Field-effect transistor having insulated gates

Info

Publication number
AU1916367A
AU1916367A AU19163/67A AU1916367A AU1916367A AU 1916367 A AU1916367 A AU 1916367A AU 19163/67 A AU19163/67 A AU 19163/67A AU 1916367 A AU1916367 A AU 1916367A AU 1916367 A AU1916367 A AU 1916367A
Authority
AU
Australia
Prior art keywords
field
effect transistor
insulated gates
gates
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU19163/67A
Other versions
AU412259B2 (en
Inventor
Okumura Tomisaburo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of AU1916367A publication Critical patent/AU1916367A/en
Publication of AU412259B2 publication Critical patent/AU412259B2/en
Expired legal-status Critical Current

Links

AU19163/67A 1966-03-30 1967-03-20 Field-effect transistor having insulated gates Expired AU412259B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JPJP20489/66 1966-03-30

Publications (2)

Publication Number Publication Date
AU1916367A true AU1916367A (en) 1968-09-26
AU412259B2 AU412259B2 (en) 1968-09-26

Family

ID=

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