CA830684A - Insulated gate field effect transistor structure with reduced current leakage - Google Patents

Insulated gate field effect transistor structure with reduced current leakage

Info

Publication number
CA830684A
CA830684A CA830684A CA830684DA CA830684A CA 830684 A CA830684 A CA 830684A CA 830684 A CA830684 A CA 830684A CA 830684D A CA830684D A CA 830684DA CA 830684 A CA830684 A CA 830684A
Authority
CA
Canada
Prior art keywords
field effect
effect transistor
insulated gate
transistor structure
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA830684A
Inventor
C. Lin Hung
S. Shiota Philip
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Publication date
Application granted granted Critical
Publication of CA830684A publication Critical patent/CA830684A/en
Expired legal-status Critical Current

Links

CA830684A Insulated gate field effect transistor structure with reduced current leakage Expired CA830684A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA830684T

Publications (1)

Publication Number Publication Date
CA830684A true CA830684A (en) 1969-12-23

Family

ID=36308146

Family Applications (1)

Application Number Title Priority Date Filing Date
CA830684A Expired CA830684A (en) Insulated gate field effect transistor structure with reduced current leakage

Country Status (1)

Country Link
CA (1) CA830684A (en)

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