JPS51147972A - Insulated gate field effect semiconductor device - Google Patents
Insulated gate field effect semiconductor deviceInfo
- Publication number
- JPS51147972A JPS51147972A JP50071767A JP7176775A JPS51147972A JP S51147972 A JPS51147972 A JP S51147972A JP 50071767 A JP50071767 A JP 50071767A JP 7176775 A JP7176775 A JP 7176775A JP S51147972 A JPS51147972 A JP S51147972A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- field effect
- insulated gate
- gate field
- effect semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000006378 damage Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the surge voltage destruction in case of applying a high voltage on the output terminal by connecting a gate control diode to the drain or the source of MOSFET.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50071767A JPS51147972A (en) | 1975-06-13 | 1975-06-13 | Insulated gate field effect semiconductor device |
GB29886/75A GB1518984A (en) | 1974-07-16 | 1975-07-16 | Integrated circuit |
DE2531846A DE2531846C2 (en) | 1974-07-16 | 1975-07-16 | Protection circuit arrangement for an insulated gate field effect transistor |
US05/768,897 US4115709A (en) | 1974-07-16 | 1977-02-15 | Gate controlled diode protection for drain of IGFET |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50071767A JPS51147972A (en) | 1975-06-13 | 1975-06-13 | Insulated gate field effect semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55106938A Division JPS6048913B2 (en) | 1980-08-04 | 1980-08-04 | Insulated gate field effect semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51147972A true JPS51147972A (en) | 1976-12-18 |
JPS5758072B2 JPS5758072B2 (en) | 1982-12-08 |
Family
ID=13470018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50071767A Granted JPS51147972A (en) | 1974-07-16 | 1975-06-13 | Insulated gate field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51147972A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53121579A (en) * | 1977-03-31 | 1978-10-24 | Toshiba Corp | Semiconductor integrated circuit |
JPS56118371A (en) * | 1980-02-22 | 1981-09-17 | Fujitsu Ltd | Semiconductor integrated circuit device |
US6794719B2 (en) * | 2001-06-28 | 2004-09-21 | Koninklijke Philips Electronics N.V. | HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63137225U (en) * | 1987-02-27 | 1988-09-09 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5110773A (en) * | 1974-07-16 | 1976-01-28 | Nippon Electric Co | Mos gatahandotaikairo |
-
1975
- 1975-06-13 JP JP50071767A patent/JPS51147972A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5110773A (en) * | 1974-07-16 | 1976-01-28 | Nippon Electric Co | Mos gatahandotaikairo |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53121579A (en) * | 1977-03-31 | 1978-10-24 | Toshiba Corp | Semiconductor integrated circuit |
JPS56118371A (en) * | 1980-02-22 | 1981-09-17 | Fujitsu Ltd | Semiconductor integrated circuit device |
US6794719B2 (en) * | 2001-06-28 | 2004-09-21 | Koninklijke Philips Electronics N.V. | HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness |
Also Published As
Publication number | Publication date |
---|---|
JPS5758072B2 (en) | 1982-12-08 |
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