JPS51147972A - Insulated gate field effect semiconductor device - Google Patents

Insulated gate field effect semiconductor device

Info

Publication number
JPS51147972A
JPS51147972A JP50071767A JP7176775A JPS51147972A JP S51147972 A JPS51147972 A JP S51147972A JP 50071767 A JP50071767 A JP 50071767A JP 7176775 A JP7176775 A JP 7176775A JP S51147972 A JPS51147972 A JP S51147972A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
insulated gate
gate field
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50071767A
Other languages
Japanese (ja)
Other versions
JPS5758072B2 (en
Inventor
Masanori Kikuchi
Taiichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50071767A priority Critical patent/JPS51147972A/en
Priority to GB29886/75A priority patent/GB1518984A/en
Priority to DE2531846A priority patent/DE2531846C2/en
Publication of JPS51147972A publication Critical patent/JPS51147972A/en
Priority to US05/768,897 priority patent/US4115709A/en
Publication of JPS5758072B2 publication Critical patent/JPS5758072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Abstract

PURPOSE:To prevent the surge voltage destruction in case of applying a high voltage on the output terminal by connecting a gate control diode to the drain or the source of MOSFET.
JP50071767A 1974-07-16 1975-06-13 Insulated gate field effect semiconductor device Granted JPS51147972A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50071767A JPS51147972A (en) 1975-06-13 1975-06-13 Insulated gate field effect semiconductor device
GB29886/75A GB1518984A (en) 1974-07-16 1975-07-16 Integrated circuit
DE2531846A DE2531846C2 (en) 1974-07-16 1975-07-16 Protection circuit arrangement for an insulated gate field effect transistor
US05/768,897 US4115709A (en) 1974-07-16 1977-02-15 Gate controlled diode protection for drain of IGFET

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071767A JPS51147972A (en) 1975-06-13 1975-06-13 Insulated gate field effect semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP55106938A Division JPS6048913B2 (en) 1980-08-04 1980-08-04 Insulated gate field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS51147972A true JPS51147972A (en) 1976-12-18
JPS5758072B2 JPS5758072B2 (en) 1982-12-08

Family

ID=13470018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071767A Granted JPS51147972A (en) 1974-07-16 1975-06-13 Insulated gate field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS51147972A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
JPS56118371A (en) * 1980-02-22 1981-09-17 Fujitsu Ltd Semiconductor integrated circuit device
US6794719B2 (en) * 2001-06-28 2004-09-21 Koninklijke Philips Electronics N.V. HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63137225U (en) * 1987-02-27 1988-09-09

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110773A (en) * 1974-07-16 1976-01-28 Nippon Electric Co Mos gatahandotaikairo

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110773A (en) * 1974-07-16 1976-01-28 Nippon Electric Co Mos gatahandotaikairo

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
JPS56118371A (en) * 1980-02-22 1981-09-17 Fujitsu Ltd Semiconductor integrated circuit device
US6794719B2 (en) * 2001-06-28 2004-09-21 Koninklijke Philips Electronics N.V. HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness

Also Published As

Publication number Publication date
JPS5758072B2 (en) 1982-12-08

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