JPS5263075A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5263075A JPS5263075A JP50138212A JP13821275A JPS5263075A JP S5263075 A JPS5263075 A JP S5263075A JP 50138212 A JP50138212 A JP 50138212A JP 13821275 A JP13821275 A JP 13821275A JP S5263075 A JPS5263075 A JP S5263075A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- resistance
- fet
- string
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:An input protecting circuit which is also string to minus side pulse is obtained by connecting a resistance between an input terminal and the gate of an IG-FET and providing diodes as specified between said resistance and a power supply.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50138212A JPS5263075A (en) | 1975-11-19 | 1975-11-19 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50138212A JPS5263075A (en) | 1975-11-19 | 1975-11-19 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5263075A true JPS5263075A (en) | 1977-05-25 |
Family
ID=15216690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50138212A Pending JPS5263075A (en) | 1975-11-19 | 1975-11-19 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5263075A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5998552A (en) * | 1982-11-03 | 1984-06-06 | ウエスチングハウス エレクトリック コ−ポレ−ション | Field effect transistor |
JPS6081868A (en) * | 1983-10-11 | 1985-05-09 | Nec Corp | Semiconductor device |
US4806999A (en) * | 1985-09-30 | 1989-02-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Area efficient input protection |
-
1975
- 1975-11-19 JP JP50138212A patent/JPS5263075A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5998552A (en) * | 1982-11-03 | 1984-06-06 | ウエスチングハウス エレクトリック コ−ポレ−ション | Field effect transistor |
JPS6081868A (en) * | 1983-10-11 | 1985-05-09 | Nec Corp | Semiconductor device |
JPH0510829B2 (en) * | 1983-10-11 | 1993-02-10 | Nippon Electric Co | |
US4806999A (en) * | 1985-09-30 | 1989-02-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Area efficient input protection |
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