JPS53121579A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS53121579A
JPS53121579A JP3666477A JP3666477A JPS53121579A JP S53121579 A JPS53121579 A JP S53121579A JP 3666477 A JP3666477 A JP 3666477A JP 3666477 A JP3666477 A JP 3666477A JP S53121579 A JPS53121579 A JP S53121579A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
fet
impurity
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3666477A
Other languages
Japanese (ja)
Inventor
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3666477A priority Critical patent/JPS53121579A/en
Publication of JPS53121579A publication Critical patent/JPS53121579A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Abstract

PURPOSE:To secure protection of the main FET by connecting the thick and impurity-doped FET to the input or the output.
JP3666477A 1977-03-31 1977-03-31 Semiconductor integrated circuit Pending JPS53121579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3666477A JPS53121579A (en) 1977-03-31 1977-03-31 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3666477A JPS53121579A (en) 1977-03-31 1977-03-31 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS53121579A true JPS53121579A (en) 1978-10-24

Family

ID=12476114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3666477A Pending JPS53121579A (en) 1977-03-31 1977-03-31 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS53121579A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671975A (en) * 1979-11-16 1981-06-15 Matsushita Electric Ind Co Ltd Mos type semiconductor system
JPS5724567A (en) * 1980-07-22 1982-02-09 Toshiba Corp Integrated circuit
JPS61128553A (en) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp Protective circuit for input
JPS61283155A (en) * 1985-06-07 1986-12-13 Mitsubishi Electric Corp Input protecting circuit of semiconductor device
EP0305935A2 (en) * 1987-08-31 1989-03-08 National Semiconductor Corporation VDD load dump protection circuit
US4924280A (en) * 1987-01-23 1990-05-08 Oki Electric Industry Co., Ltd. Semiconductor fet with long channel length
US5285095A (en) * 1991-06-13 1994-02-08 Nec Corporation Semiconductor integrated circuit with input protective transistor effective against electric surge
JPH07240516A (en) * 1994-02-28 1995-09-12 Mitsubishi Electric Corp Field effect type semiconductor device and its manufacture

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4881485A (en) * 1972-01-31 1973-10-31
JPS5029178A (en) * 1973-07-18 1975-03-25
JPS5154778A (en) * 1974-11-08 1976-05-14 Fujitsu Ltd
JPS51147972A (en) * 1975-06-13 1976-12-18 Nec Corp Insulated gate field effect semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4881485A (en) * 1972-01-31 1973-10-31
JPS5029178A (en) * 1973-07-18 1975-03-25
JPS5154778A (en) * 1974-11-08 1976-05-14 Fujitsu Ltd
JPS51147972A (en) * 1975-06-13 1976-12-18 Nec Corp Insulated gate field effect semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671975A (en) * 1979-11-16 1981-06-15 Matsushita Electric Ind Co Ltd Mos type semiconductor system
JPS5724567A (en) * 1980-07-22 1982-02-09 Toshiba Corp Integrated circuit
JPS61128553A (en) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp Protective circuit for input
JPH0314233B2 (en) * 1984-11-27 1991-02-26 Mitsubishi Electric Corp
JPS61283155A (en) * 1985-06-07 1986-12-13 Mitsubishi Electric Corp Input protecting circuit of semiconductor device
US4924280A (en) * 1987-01-23 1990-05-08 Oki Electric Industry Co., Ltd. Semiconductor fet with long channel length
US4987464A (en) * 1987-01-23 1991-01-22 Oki Electric Industry Co., Ltd. Encapsulated FET semiconductor device with large W/L ratio
EP0305935A2 (en) * 1987-08-31 1989-03-08 National Semiconductor Corporation VDD load dump protection circuit
US5285095A (en) * 1991-06-13 1994-02-08 Nec Corporation Semiconductor integrated circuit with input protective transistor effective against electric surge
JPH07240516A (en) * 1994-02-28 1995-09-12 Mitsubishi Electric Corp Field effect type semiconductor device and its manufacture

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