JPS5724567A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPS5724567A
JPS5724567A JP10036980A JP10036980A JPS5724567A JP S5724567 A JPS5724567 A JP S5724567A JP 10036980 A JP10036980 A JP 10036980A JP 10036980 A JP10036980 A JP 10036980A JP S5724567 A JPS5724567 A JP S5724567A
Authority
JP
Japan
Prior art keywords
integrated circuit
outside
gate insulating
semiconductor substrate
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10036980A
Other languages
Japanese (ja)
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10036980A priority Critical patent/JPS5724567A/en
Publication of JPS5724567A publication Critical patent/JPS5724567A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To improve the withstand to an over input voltage, by thickening relatively to other parts the input FET gate insulating layer receiving the signal from the inside and the outside of a plurality of IGFETs formed on a semiconductor substrate. CONSTITUTION:The gate insulating film 18 of an input FET17 receiving signals from the inside of a plurality of insulating gate type FETs (IGFET) formed on a semiconductor substrate and the outside of the integrated circuit is made thicker than a gate insulating film 20 of an FET19 inside the integrated circuit. Thus, the miniaturization of the semiconductor integrated circuit is attained and at the same time the integrated circuit withstanding the over input voltage from the outside can be obtained.
JP10036980A 1980-07-22 1980-07-22 Integrated circuit Pending JPS5724567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10036980A JPS5724567A (en) 1980-07-22 1980-07-22 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10036980A JPS5724567A (en) 1980-07-22 1980-07-22 Integrated circuit

Publications (1)

Publication Number Publication Date
JPS5724567A true JPS5724567A (en) 1982-02-09

Family

ID=14272130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10036980A Pending JPS5724567A (en) 1980-07-22 1980-07-22 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS5724567A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63115363A (en) * 1986-10-31 1988-05-19 Nec Corp Input protection circuit
US5905291A (en) * 1994-07-25 1999-05-18 Seiko Instruments Inc. MISFET semiconductor integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63115363A (en) * 1986-10-31 1988-05-19 Nec Corp Input protection circuit
US5905291A (en) * 1994-07-25 1999-05-18 Seiko Instruments Inc. MISFET semiconductor integrated circuit device

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