JPS5375877A - Vertical type micro mos transistor - Google Patents
Vertical type micro mos transistorInfo
- Publication number
- JPS5375877A JPS5375877A JP15230676A JP15230676A JPS5375877A JP S5375877 A JPS5375877 A JP S5375877A JP 15230676 A JP15230676 A JP 15230676A JP 15230676 A JP15230676 A JP 15230676A JP S5375877 A JPS5375877 A JP S5375877A
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- mos transistor
- vertical type
- type micro
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To increase the scale of integration by forming the laminated layers of first set, second set and third set insulation layers and conductive layers along the outside circumferential part of the transistor forming portions of a semiconductor substrate, and corresponding the first conductive layer to a source or drain region, the second conductive layer to a channel region through an insulation film and further the third conductive layer to a source through an insulation film and further the third conductive layer to a source region.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15230676A JPS5375877A (en) | 1976-12-17 | 1976-12-17 | Vertical type micro mos transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15230676A JPS5375877A (en) | 1976-12-17 | 1976-12-17 | Vertical type micro mos transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5375877A true JPS5375877A (en) | 1978-07-05 |
Family
ID=15537633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15230676A Pending JPS5375877A (en) | 1976-12-17 | 1976-12-17 | Vertical type micro mos transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5375877A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0098111A2 (en) * | 1982-06-24 | 1984-01-11 | Harris Semiconductor Patents, Inc. | Vertical IGFET device and method for fabricating same |
| JPS6025272A (en) * | 1983-07-21 | 1985-02-08 | Nec Corp | Insulated gate field-effect type transistor |
| US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
| JPS6286860A (en) * | 1985-10-08 | 1987-04-21 | モトロ−ラ・インコ−ポレ−テツド | Polycrystalline side wall contact transistor and manufactureof the same |
| US4924279A (en) * | 1983-05-12 | 1990-05-08 | Seiko Instruments Inc. | Thin film transistor |
| US5096844A (en) * | 1988-08-25 | 1992-03-17 | Licentia Patent-Verwaltungs-Gmbh | Method for manufacturing bipolar transistor by selective epitaxial growth of base and emitter layers |
| JP2011108895A (en) * | 2009-11-18 | 2011-06-02 | Renesas Electronics Corp | Method of manufacturing semiconductor device |
-
1976
- 1976-12-17 JP JP15230676A patent/JPS5375877A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0098111A2 (en) * | 1982-06-24 | 1984-01-11 | Harris Semiconductor Patents, Inc. | Vertical IGFET device and method for fabricating same |
| US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
| EP0098111B1 (en) * | 1982-06-24 | 1989-08-09 | Harris Semiconductor Patents, Inc. | Vertical igfet device and method for fabricating same |
| US4924279A (en) * | 1983-05-12 | 1990-05-08 | Seiko Instruments Inc. | Thin film transistor |
| JPS6025272A (en) * | 1983-07-21 | 1985-02-08 | Nec Corp | Insulated gate field-effect type transistor |
| JPS6286860A (en) * | 1985-10-08 | 1987-04-21 | モトロ−ラ・インコ−ポレ−テツド | Polycrystalline side wall contact transistor and manufactureof the same |
| US5096844A (en) * | 1988-08-25 | 1992-03-17 | Licentia Patent-Verwaltungs-Gmbh | Method for manufacturing bipolar transistor by selective epitaxial growth of base and emitter layers |
| JP2011108895A (en) * | 2009-11-18 | 2011-06-02 | Renesas Electronics Corp | Method of manufacturing semiconductor device |
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