JPS52130580A - High densityintegrated circuit device - Google Patents

High densityintegrated circuit device

Info

Publication number
JPS52130580A
JPS52130580A JP4719076A JP4719076A JPS52130580A JP S52130580 A JPS52130580 A JP S52130580A JP 4719076 A JP4719076 A JP 4719076A JP 4719076 A JP4719076 A JP 4719076A JP S52130580 A JPS52130580 A JP S52130580A
Authority
JP
Japan
Prior art keywords
densityintegrated
circuit device
regions
polycrystalline
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4719076A
Other languages
Japanese (ja)
Inventor
Sakae Takei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4719076A priority Critical patent/JPS52130580A/en
Priority to GB1208877A priority patent/GB1564784A/en
Publication of JPS52130580A publication Critical patent/JPS52130580A/en
Priority to US05/923,223 priority patent/US4162506A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To increase the scale of integration of a MOS IC by depositing an insulation oxide film on source and drain regions and the region extending over these regions and forming a thin polycrystalline Si gate electrode and further a thick polycrystalline Si wiring layer over said film.
JP4719076A 1976-04-27 1976-04-27 High densityintegrated circuit device Pending JPS52130580A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP4719076A JPS52130580A (en) 1976-04-27 1976-04-27 High densityintegrated circuit device
GB1208877A GB1564784A (en) 1976-04-27 1977-03-22 Device
US05/923,223 US4162506A (en) 1976-04-27 1978-07-10 Semiconductor integrated circuit device with dual thickness poly-silicon wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4719076A JPS52130580A (en) 1976-04-27 1976-04-27 High densityintegrated circuit device

Publications (1)

Publication Number Publication Date
JPS52130580A true JPS52130580A (en) 1977-11-01

Family

ID=12768179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4719076A Pending JPS52130580A (en) 1976-04-27 1976-04-27 High densityintegrated circuit device

Country Status (2)

Country Link
JP (1) JPS52130580A (en)
GB (1) GB1564784A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101282A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Two layer rolysilicon semiconductor device
JPS55108772A (en) * 1979-02-14 1980-08-21 Nec Corp Semiconductor integrated circuit device
JPS60182774A (en) * 1984-02-29 1985-09-18 Matsushita Electronics Corp Manufacture of fet

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101282A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Two layer rolysilicon semiconductor device
JPS55108772A (en) * 1979-02-14 1980-08-21 Nec Corp Semiconductor integrated circuit device
JPS60182774A (en) * 1984-02-29 1985-09-18 Matsushita Electronics Corp Manufacture of fet
JPH0654811B2 (en) * 1984-02-29 1994-07-20 松下電子工業株式会社 Method for manufacturing field effect transistor

Also Published As

Publication number Publication date
GB1564784A (en) 1980-04-16

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