JPS52129383A - Mis semicnductor integrated circuit device - Google Patents

Mis semicnductor integrated circuit device

Info

Publication number
JPS52129383A
JPS52129383A JP4551276A JP4551276A JPS52129383A JP S52129383 A JPS52129383 A JP S52129383A JP 4551276 A JP4551276 A JP 4551276A JP 4551276 A JP4551276 A JP 4551276A JP S52129383 A JPS52129383 A JP S52129383A
Authority
JP
Japan
Prior art keywords
mis
semicnductor
integrated circuit
circuit device
varying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4551276A
Other languages
Japanese (ja)
Inventor
Masashi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4551276A priority Critical patent/JPS52129383A/en
Publication of JPS52129383A publication Critical patent/JPS52129383A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Abstract

PURPOSE:To obtain a MIS-IC suitable for various circuit specifications by forming first and second MIS elements of varying threshold voltages on the same semiconductor substrate by varying the respective thicknesses of a gate electrode material and the material for gate insulation film.
JP4551276A 1976-04-23 1976-04-23 Mis semicnductor integrated circuit device Pending JPS52129383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4551276A JPS52129383A (en) 1976-04-23 1976-04-23 Mis semicnductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4551276A JPS52129383A (en) 1976-04-23 1976-04-23 Mis semicnductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS52129383A true JPS52129383A (en) 1977-10-29

Family

ID=12721457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4551276A Pending JPS52129383A (en) 1976-04-23 1976-04-23 Mis semicnductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS52129383A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582071A (en) * 1981-06-25 1983-01-07 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582071A (en) * 1981-06-25 1983-01-07 Mitsubishi Electric Corp Manufacture of semiconductor device

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