JPS53121583A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53121583A
JPS53121583A JP3669477A JP3669477A JPS53121583A JP S53121583 A JPS53121583 A JP S53121583A JP 3669477 A JP3669477 A JP 3669477A JP 3669477 A JP3669477 A JP 3669477A JP S53121583 A JPS53121583 A JP S53121583A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
transistor
electrode structure
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3669477A
Inventor
Mitsuaki Ishikawa
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP3669477A priority Critical patent/JPS53121583A/en
Publication of JPS53121583A publication Critical patent/JPS53121583A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Abstract

PURPOSE:To reduce the ion injection frequency and to enhance the characteristics by forming the second transistor after formation of the second gate oxide film when both the first transistor of 2-layer gate electrode structure and the depletion-type second transistor of 1-layer gate electrode structure.
JP3669477A 1977-03-31 1977-03-31 Manufacture of semiconductor device Pending JPS53121583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3669477A JPS53121583A (en) 1977-03-31 1977-03-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3669477A JPS53121583A (en) 1977-03-31 1977-03-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53121583A true JPS53121583A (en) 1978-10-24

Family

ID=12476892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3669477A Pending JPS53121583A (en) 1977-03-31 1977-03-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53121583A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660064A (en) * 1979-10-23 1981-05-23 Fujitsu Ltd Manufacture of semiconductor device
US6812766B2 (en) 2001-05-22 2004-11-02 Matsushita Electric Industrial Co., Ltd. Input/output circuit of semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660064A (en) * 1979-10-23 1981-05-23 Fujitsu Ltd Manufacture of semiconductor device
US6812766B2 (en) 2001-05-22 2004-11-02 Matsushita Electric Industrial Co., Ltd. Input/output circuit of semiconductor integrated circuit

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