JPS5367388A - Memory semiconductor device - Google Patents

Memory semiconductor device

Info

Publication number
JPS5367388A
JPS5367388A JP14273276A JP14273276A JPS5367388A JP S5367388 A JPS5367388 A JP S5367388A JP 14273276 A JP14273276 A JP 14273276A JP 14273276 A JP14273276 A JP 14273276A JP S5367388 A JPS5367388 A JP S5367388A
Authority
JP
Japan
Prior art keywords
semiconductor device
memory semiconductor
type silicon
capacitor
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14273276A
Other languages
Japanese (ja)
Inventor
Tatsuya Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14273276A priority Critical patent/JPS5367388A/en
Publication of JPS5367388A publication Critical patent/JPS5367388A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To let the device operate stably even against high voltage of bit terminals by doping phosphorus to the P type silicon substrate surface under the dielectric film of a capacitor to form an n type silicon layer, and making the threshold voltage of the capacitor lower than that of a MOSFET.
JP14273276A 1976-11-27 1976-11-27 Memory semiconductor device Pending JPS5367388A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14273276A JPS5367388A (en) 1976-11-27 1976-11-27 Memory semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14273276A JPS5367388A (en) 1976-11-27 1976-11-27 Memory semiconductor device

Publications (1)

Publication Number Publication Date
JPS5367388A true JPS5367388A (en) 1978-06-15

Family

ID=15322283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14273276A Pending JPS5367388A (en) 1976-11-27 1976-11-27 Memory semiconductor device

Country Status (1)

Country Link
JP (1) JPS5367388A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108383A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Semiconductor deivce and its manufacture
JPS59178765A (en) * 1983-03-30 1984-10-11 Toshiba Corp Semiconductor device and manufacture thereof
JPS60136157U (en) * 1984-12-29 1985-09-10 富士通株式会社 semiconductor storage device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108383A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Semiconductor deivce and its manufacture
JPS59178765A (en) * 1983-03-30 1984-10-11 Toshiba Corp Semiconductor device and manufacture thereof
JPS60136157U (en) * 1984-12-29 1985-09-10 富士通株式会社 semiconductor storage device
JPH0337240Y2 (en) * 1984-12-29 1991-08-07

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