JPS538084A - Mis type semiconductor device - Google Patents
Mis type semiconductor deviceInfo
- Publication number
- JPS538084A JPS538084A JP8199376A JP8199376A JPS538084A JP S538084 A JPS538084 A JP S538084A JP 8199376 A JP8199376 A JP 8199376A JP 8199376 A JP8199376 A JP 8199376A JP S538084 A JPS538084 A JP S538084A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type semiconductor
- mis type
- layers
- kinds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Abstract
PURPOSE:To obtain a device having a high speed non-volatile memory mechanism by providing a high concentration layer of the same conductivity type as that of the substrate and forming gate layers with two kinds of layers of varying dielectric constants.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8199376A JPS538084A (en) | 1976-07-12 | 1976-07-12 | Mis type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8199376A JPS538084A (en) | 1976-07-12 | 1976-07-12 | Mis type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS538084A true JPS538084A (en) | 1978-01-25 |
Family
ID=13761990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8199376A Pending JPS538084A (en) | 1976-07-12 | 1976-07-12 | Mis type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS538084A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5657512A (en) * | 1979-10-15 | 1981-05-20 | Stanley Electric Co Ltd | Method and apparatus for automatic opening and closing window of vehicle |
JPS60185625A (en) * | 1984-03-05 | 1985-09-21 | Mitsuba Denki Seisakusho:Kk | Window glass elevation unit |
-
1976
- 1976-07-12 JP JP8199376A patent/JPS538084A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5657512A (en) * | 1979-10-15 | 1981-05-20 | Stanley Electric Co Ltd | Method and apparatus for automatic opening and closing window of vehicle |
JPS6330164B2 (en) * | 1979-10-15 | 1988-06-16 | Stanley Electric Co Ltd | |
JPS60185625A (en) * | 1984-03-05 | 1985-09-21 | Mitsuba Denki Seisakusho:Kk | Window glass elevation unit |
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