JPS5371588A - Manufacture of semiconductor memory device - Google Patents

Manufacture of semiconductor memory device

Info

Publication number
JPS5371588A
JPS5371588A JP14752576A JP14752576A JPS5371588A JP S5371588 A JPS5371588 A JP S5371588A JP 14752576 A JP14752576 A JP 14752576A JP 14752576 A JP14752576 A JP 14752576A JP S5371588 A JPS5371588 A JP S5371588A
Authority
JP
Japan
Prior art keywords
memory device
manufacture
semiconductor memory
capacitance element
highly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14752576A
Other languages
Japanese (ja)
Inventor
Yoji Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14752576A priority Critical patent/JPS5371588A/en
Publication of JPS5371588A publication Critical patent/JPS5371588A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:A Si3N4 film whose dielectric constant is relatively high is used as the dielectric material of a capacitance element so as to reduce the area occupied by the capacitance element, so that a highly-integrated MOS memory device can be obtained.
JP14752576A 1976-12-07 1976-12-07 Manufacture of semiconductor memory device Pending JPS5371588A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14752576A JPS5371588A (en) 1976-12-07 1976-12-07 Manufacture of semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14752576A JPS5371588A (en) 1976-12-07 1976-12-07 Manufacture of semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5371588A true JPS5371588A (en) 1978-06-26

Family

ID=15432275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14752576A Pending JPS5371588A (en) 1976-12-07 1976-12-07 Manufacture of semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5371588A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151361A (en) * 1979-05-16 1980-11-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Fabricating method of semiconductor device
JPS57145364A (en) * 1981-03-04 1982-09-08 Nec Corp Semiconductor memory ic device
JPS6045054A (en) * 1983-08-22 1985-03-11 Nec Corp Manufacture of mis type semiconductor memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151361A (en) * 1979-05-16 1980-11-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Fabricating method of semiconductor device
JPS57145364A (en) * 1981-03-04 1982-09-08 Nec Corp Semiconductor memory ic device
JPS6045054A (en) * 1983-08-22 1985-03-11 Nec Corp Manufacture of mis type semiconductor memory device

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