JPS52154390A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52154390A
JPS52154390A JP7108176A JP7108176A JPS52154390A JP S52154390 A JPS52154390 A JP S52154390A JP 7108176 A JP7108176 A JP 7108176A JP 7108176 A JP7108176 A JP 7108176A JP S52154390 A JPS52154390 A JP S52154390A
Authority
JP
Japan
Prior art keywords
semiconductor device
incorporate
capacitor
substrate
small area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7108176A
Other languages
Japanese (ja)
Other versions
JPS5948547B2 (en
Inventor
Seiichi Iwamatsu
Yukio Tanigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51071081A priority Critical patent/JPS5948547B2/en
Publication of JPS52154390A publication Critical patent/JPS52154390A/en
Publication of JPS5948547B2 publication Critical patent/JPS5948547B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To incorporate a capacitor of a small area and a large capacity by forming grooves in the surface of a substrate.
JP51071081A 1976-06-18 1976-06-18 Manufacturing method for semiconductor devices Expired JPS5948547B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51071081A JPS5948547B2 (en) 1976-06-18 1976-06-18 Manufacturing method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51071081A JPS5948547B2 (en) 1976-06-18 1976-06-18 Manufacturing method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS52154390A true JPS52154390A (en) 1977-12-22
JPS5948547B2 JPS5948547B2 (en) 1984-11-27

Family

ID=13450209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51071081A Expired JPS5948547B2 (en) 1976-06-18 1976-06-18 Manufacturing method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5948547B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6323351A (en) * 1987-05-22 1988-01-30 Toshiba Corp Manufacture of semiconductor device
JPH01152661A (en) * 1988-06-20 1989-06-15 Hitachi Ltd Semiconductor memory
JPH03174768A (en) * 1982-11-04 1991-07-29 Hitachi Ltd Semiconductor memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174768A (en) * 1982-11-04 1991-07-29 Hitachi Ltd Semiconductor memory
JPS6323351A (en) * 1987-05-22 1988-01-30 Toshiba Corp Manufacture of semiconductor device
JPH0441506B2 (en) * 1987-05-22 1992-07-08 Tokyo Shibaura Electric Co
JPH01152661A (en) * 1988-06-20 1989-06-15 Hitachi Ltd Semiconductor memory
JPH0577342B2 (en) * 1988-06-20 1993-10-26 Hitachi Ltd

Also Published As

Publication number Publication date
JPS5948547B2 (en) 1984-11-27

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