JPS5376687A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5376687A
JPS5376687A JP15242976A JP15242976A JPS5376687A JP S5376687 A JPS5376687 A JP S5376687A JP 15242976 A JP15242976 A JP 15242976A JP 15242976 A JP15242976 A JP 15242976A JP S5376687 A JPS5376687 A JP S5376687A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
increasing
per unit
device capable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15242976A
Other languages
Japanese (ja)
Inventor
Shigeru Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15242976A priority Critical patent/JPS5376687A/en
Publication of JPS5376687A publication Critical patent/JPS5376687A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a semiconductor memory device capable of increasing the capacity value per unit area of memory condensers.
JP15242976A 1976-12-17 1976-12-17 Semiconductor memory device Pending JPS5376687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15242976A JPS5376687A (en) 1976-12-17 1976-12-17 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15242976A JPS5376687A (en) 1976-12-17 1976-12-17 Semiconductor memory device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60047757A Division JPS60216578A (en) 1985-03-11 1985-03-11 Semiconductor meory device

Publications (1)

Publication Number Publication Date
JPS5376687A true JPS5376687A (en) 1978-07-07

Family

ID=15540319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15242976A Pending JPS5376687A (en) 1976-12-17 1976-12-17 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5376687A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111879A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor storage device
DE3146352A1 (en) * 1980-11-28 1982-09-02 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven SEMICONDUCTOR ARRANGEMENT
JPS5894190A (en) * 1981-11-27 1983-06-04 Mitsubishi Electric Corp Mos dynamic memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5359384A (en) * 1976-09-13 1978-05-29 Texas Instruments Inc Nnchannel mos silicon gate ram cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5359384A (en) * 1976-09-13 1978-05-29 Texas Instruments Inc Nnchannel mos silicon gate ram cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3146352A1 (en) * 1980-11-28 1982-09-02 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven SEMICONDUCTOR ARRANGEMENT
JPS57111879A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor storage device
JPS5894190A (en) * 1981-11-27 1983-06-04 Mitsubishi Electric Corp Mos dynamic memory

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