JPS538581A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS538581A
JPS538581A JP8268876A JP8268876A JPS538581A JP S538581 A JPS538581 A JP S538581A JP 8268876 A JP8268876 A JP 8268876A JP 8268876 A JP8268876 A JP 8268876A JP S538581 A JPS538581 A JP S538581A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory unit
condenser
substrate
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8268876A
Other languages
Japanese (ja)
Inventor
Keiichi Shimakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8268876A priority Critical patent/JPS538581A/en
Publication of JPS538581A publication Critical patent/JPS538581A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a memory which has a condenser of large capacity, by using a substrate density which is most suitable from the view point of characteristic of NIS type transistor, and by applying high density only for a region of substrate, in which the condenser is formed.
JP8268876A 1976-07-12 1976-07-12 Semiconductor memory unit Pending JPS538581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8268876A JPS538581A (en) 1976-07-12 1976-07-12 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8268876A JPS538581A (en) 1976-07-12 1976-07-12 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS538581A true JPS538581A (en) 1978-01-26

Family

ID=13781347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8268876A Pending JPS538581A (en) 1976-07-12 1976-07-12 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS538581A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546940A (en) * 1978-09-29 1980-04-02 Nitto Electric Ind Co Ltd Manufacture of complex foamed-plastic pipe
JPS60126861A (en) * 1983-12-13 1985-07-06 Fujitsu Ltd Semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546940A (en) * 1978-09-29 1980-04-02 Nitto Electric Ind Co Ltd Manufacture of complex foamed-plastic pipe
JPS5760136B2 (en) * 1978-09-29 1982-12-17 Nitto Electric Ind Co
JPS60126861A (en) * 1983-12-13 1985-07-06 Fujitsu Ltd Semiconductor memory device
JPH0562468B2 (en) * 1983-12-13 1993-09-08 Fujitsu Ltd

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