JPS53121582A - Semiconductor memory unit and its manufacture - Google Patents

Semiconductor memory unit and its manufacture

Info

Publication number
JPS53121582A
JPS53121582A JP3667977A JP3667977A JPS53121582A JP S53121582 A JPS53121582 A JP S53121582A JP 3667977 A JP3667977 A JP 3667977A JP 3667977 A JP3667977 A JP 3667977A JP S53121582 A JPS53121582 A JP S53121582A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor memory
memory unit
substrate surface
insulator film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3667977A
Other languages
Japanese (ja)
Inventor
Shigeharu Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3667977A priority Critical patent/JPS53121582A/en
Publication of JPS53121582A publication Critical patent/JPS53121582A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a good-characteristics MNOS memory with a high reproduction properties and a high control performance, by forming the gate insulator film on the semiconductor substrate surface between the source and the drain regions in the opposite way to the ordinary system, that is, the insulator film is formed by laminating the Si3N4 and SiO2 films in that order from the substrate surface.
JP3667977A 1977-03-31 1977-03-31 Semiconductor memory unit and its manufacture Pending JPS53121582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3667977A JPS53121582A (en) 1977-03-31 1977-03-31 Semiconductor memory unit and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3667977A JPS53121582A (en) 1977-03-31 1977-03-31 Semiconductor memory unit and its manufacture

Publications (1)

Publication Number Publication Date
JPS53121582A true JPS53121582A (en) 1978-10-24

Family

ID=12476530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3667977A Pending JPS53121582A (en) 1977-03-31 1977-03-31 Semiconductor memory unit and its manufacture

Country Status (1)

Country Link
JP (1) JPS53121582A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123775A (en) * 1982-01-19 1983-07-23 Agency Of Ind Science & Technol Nonvolatile semiconductor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123775A (en) * 1982-01-19 1983-07-23 Agency Of Ind Science & Technol Nonvolatile semiconductor memory

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