JPS5242381A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5242381A
JPS5242381A JP50117696A JP11769675A JPS5242381A JP S5242381 A JPS5242381 A JP S5242381A JP 50117696 A JP50117696 A JP 50117696A JP 11769675 A JP11769675 A JP 11769675A JP S5242381 A JPS5242381 A JP S5242381A
Authority
JP
Japan
Prior art keywords
storage device
semiconductor storage
seale
integration
obtaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50117696A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50117696A priority Critical patent/JPS5242381A/en
Publication of JPS5242381A publication Critical patent/JPS5242381A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To provide a thin insulating protecting film between a gate insulating film formed with a ferro dielectric materials and a semiconductor substrate thereby making possible the higher seale of integration and obtaining a stable semiconductor storage device.
JP50117696A 1975-10-01 1975-10-01 Semiconductor storage device Pending JPS5242381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50117696A JPS5242381A (en) 1975-10-01 1975-10-01 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50117696A JPS5242381A (en) 1975-10-01 1975-10-01 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS5242381A true JPS5242381A (en) 1977-04-01

Family

ID=14718025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50117696A Pending JPS5242381A (en) 1975-10-01 1975-10-01 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5242381A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172771A (en) * 1981-04-16 1982-10-23 Seiko Epson Corp Semiconductor memory device
JPS57172772A (en) * 1981-04-16 1982-10-23 Seiko Epson Corp Semiconductor memory device
JPS62185376A (en) * 1986-01-31 1987-08-13 バイエル・アクチエンゲゼルシヤフト Nonvolatile electronic memory
US4888630A (en) * 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
JPH0817945A (en) * 1994-06-27 1996-01-19 Nec Corp Semiconductor storage device and its manufacture
US6853027B2 (en) 1991-10-30 2005-02-08 Rohm Company, Ltd. Semiconductor nonvolatile memory with low programming voltage

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172771A (en) * 1981-04-16 1982-10-23 Seiko Epson Corp Semiconductor memory device
JPS57172772A (en) * 1981-04-16 1982-10-23 Seiko Epson Corp Semiconductor memory device
JPS62185376A (en) * 1986-01-31 1987-08-13 バイエル・アクチエンゲゼルシヤフト Nonvolatile electronic memory
US4888630A (en) * 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
US6853027B2 (en) 1991-10-30 2005-02-08 Rohm Company, Ltd. Semiconductor nonvolatile memory with low programming voltage
JPH0817945A (en) * 1994-06-27 1996-01-19 Nec Corp Semiconductor storage device and its manufacture

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