JPS52154392A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS52154392A
JPS52154392A JP7112176A JP7112176A JPS52154392A JP S52154392 A JPS52154392 A JP S52154392A JP 7112176 A JP7112176 A JP 7112176A JP 7112176 A JP7112176 A JP 7112176A JP S52154392 A JPS52154392 A JP S52154392A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
poly
film
insualtion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7112176A
Other languages
Japanese (ja)
Inventor
Shigeru Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7112176A priority Critical patent/JPS52154392A/en
Publication of JPS52154392A publication Critical patent/JPS52154392A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To provide resistance elements of a given value in compact by forming islands of poly-Si on the poly-Si layer over the insualtion film of a substrate through an insulation film and diffusing an impurity.
JP7112176A 1976-06-18 1976-06-18 Production of semiconductor device Pending JPS52154392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7112176A JPS52154392A (en) 1976-06-18 1976-06-18 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7112176A JPS52154392A (en) 1976-06-18 1976-06-18 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS52154392A true JPS52154392A (en) 1977-12-22

Family

ID=13451407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7112176A Pending JPS52154392A (en) 1976-06-18 1976-06-18 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS52154392A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54140488A (en) * 1978-04-24 1979-10-31 Hitachi Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54140488A (en) * 1978-04-24 1979-10-31 Hitachi Ltd Semiconductor device

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