JPS5363878A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5363878A
JPS5363878A JP13879676A JP13879676A JPS5363878A JP S5363878 A JPS5363878 A JP S5363878A JP 13879676 A JP13879676 A JP 13879676A JP 13879676 A JP13879676 A JP 13879676A JP S5363878 A JPS5363878 A JP S5363878A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
selectively
epoly
miniaturize
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13879676A
Other languages
Japanese (ja)
Other versions
JPS608636B2 (en
Inventor
Yoshihiro Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP13879676A priority Critical patent/JPS608636B2/en
Publication of JPS5363878A publication Critical patent/JPS5363878A/en
Publication of JPS608636B2 publication Critical patent/JPS608636B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To miniaturize the device and lower its current by providing diffused layers selectively through poly-Si with the selectively formed oxide films as a mask and leading out th epoly-Si having received diffusion as wiring layer onto the CVD SiO2 film provided on the surface.
JP13879676A 1976-11-18 1976-11-18 Manufacturing method of semiconductor device Expired JPS608636B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13879676A JPS608636B2 (en) 1976-11-18 1976-11-18 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13879676A JPS608636B2 (en) 1976-11-18 1976-11-18 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5363878A true JPS5363878A (en) 1978-06-07
JPS608636B2 JPS608636B2 (en) 1985-03-04

Family

ID=15230414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13879676A Expired JPS608636B2 (en) 1976-11-18 1976-11-18 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS608636B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526637A (en) * 1978-08-16 1980-02-26 Agency Of Ind Science & Technol Manufacturing of semiconductor device
JPS55102270A (en) * 1979-01-29 1980-08-05 Agency Of Ind Science & Technol Method of fabricating semiconductor device
JPS5640281A (en) * 1979-09-06 1981-04-16 Teletype Corp Producing device
JPS5680169A (en) * 1979-12-04 1981-07-01 Seiko Epson Corp Manufacture of semiconductor device
JPS56144581A (en) * 1980-04-11 1981-11-10 Sanyo Electric Co Ltd Production of metal oxide semiconductor type transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63109448U (en) * 1987-01-09 1988-07-14

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526637A (en) * 1978-08-16 1980-02-26 Agency Of Ind Science & Technol Manufacturing of semiconductor device
JPS55102270A (en) * 1979-01-29 1980-08-05 Agency Of Ind Science & Technol Method of fabricating semiconductor device
JPH0212013B2 (en) * 1979-01-29 1990-03-16 Kogyo Gijutsu Incho
JPS5640281A (en) * 1979-09-06 1981-04-16 Teletype Corp Producing device
JPS5680169A (en) * 1979-12-04 1981-07-01 Seiko Epson Corp Manufacture of semiconductor device
JPS56144581A (en) * 1980-04-11 1981-11-10 Sanyo Electric Co Ltd Production of metal oxide semiconductor type transistor

Also Published As

Publication number Publication date
JPS608636B2 (en) 1985-03-04

Similar Documents

Publication Publication Date Title
JPS5363878A (en) Production of semiconductor device
JPS5363993A (en) Production of semiconductor device
JPS5255475A (en) Production of semiconductor device
JPS5289464A (en) Semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS5380A (en) Manufacture of semiconductor device
JPS5371572A (en) Manufacture of lateral pnp transistor
JPS5317068A (en) Semiconductor device and its production
JPS52154392A (en) Production of semiconductor device
JPS52141573A (en) Manufacture of semiconductor device
JPS52129288A (en) Production of semiconductor integrated citrcuit
JPS5372473A (en) Manufacture of mis type semicondctor device
JPS52141580A (en) Manufacture of mos-type semiconductor device
JPS5357774A (en) Dielectric insulated and isolated substrate and its production
JPS5253680A (en) Semiconductor device
JPS5327372A (en) Production of s emiconductor device
JPS5285488A (en) Semiconductor resistance element
JPS52123879A (en) Mos type semiconductor device and its production
JPS5283073A (en) Production of semiconductor device
JPS52139377A (en) Production of semiconductor device
JPS5365086A (en) Production of semiconductor device
JPS5280782A (en) Semiconductor device
JPS5380184A (en) Manufacture of semiconductor device
JPS52147969A (en) Manufacture of semiconductor device
JPS5484980A (en) Semiconductor device

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Effective date: 20050830

Free format text: JAPANESE INTERMEDIATE CODE: A131

A521 Written amendment

Effective date: 20051129

Free format text: JAPANESE INTERMEDIATE CODE: A523

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060131

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060411

A131 Notification of reasons for refusal

Effective date: 20061212

Free format text: JAPANESE INTERMEDIATE CODE: A131

A521 Written amendment

Effective date: 20070308

Free format text: JAPANESE INTERMEDIATE CODE: A523

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070911

A61 First payment of annual fees (during grant procedure)

Effective date: 20070921

Free format text: JAPANESE INTERMEDIATE CODE: A61

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100928

Year of fee payment: 3

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 4

Free format text: PAYMENT UNTIL: 20110928

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110928

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 4

Free format text: PAYMENT UNTIL: 20110928

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 5

Free format text: PAYMENT UNTIL: 20120928

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 6

Free format text: PAYMENT UNTIL: 20130928

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250