JPS5285488A - Semiconductor resistance element - Google Patents

Semiconductor resistance element

Info

Publication number
JPS5285488A
JPS5285488A JP154676A JP154676A JPS5285488A JP S5285488 A JPS5285488 A JP S5285488A JP 154676 A JP154676 A JP 154676A JP 154676 A JP154676 A JP 154676A JP S5285488 A JPS5285488 A JP S5285488A
Authority
JP
Japan
Prior art keywords
resistance element
semiconductor resistance
forming
groove group
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP154676A
Other languages
Japanese (ja)
Inventor
Sadao Ogura
Kazuo Hoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP154676A priority Critical patent/JPS5285488A/en
Publication of JPS5285488A publication Critical patent/JPS5285488A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Abstract

PURPOSE:To reduce the occupying area of a resistor and increase the density of integration by forming a groove group of a V-form section by anisotropic etching on the surface of a semiconductor substrate and forming a resistance layer through impurity diffusion, etc. along the continuous surface including said groove group.
JP154676A 1976-01-09 1976-01-09 Semiconductor resistance element Pending JPS5285488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP154676A JPS5285488A (en) 1976-01-09 1976-01-09 Semiconductor resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP154676A JPS5285488A (en) 1976-01-09 1976-01-09 Semiconductor resistance element

Publications (1)

Publication Number Publication Date
JPS5285488A true JPS5285488A (en) 1977-07-15

Family

ID=11504509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP154676A Pending JPS5285488A (en) 1976-01-09 1976-01-09 Semiconductor resistance element

Country Status (1)

Country Link
JP (1) JPS5285488A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632755A (en) * 1979-08-24 1981-04-02 Nec Corp Semiconductor device
FR2905522A1 (en) * 2006-08-31 2008-03-07 St Microelectronics Sa Three dimensional resister for e.g. P type lightly doped single crystal silicon substrate, has vertical path along walls and horizontal path along base in N type strongly doped layer, where layer extends on walls and base of one trench

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632755A (en) * 1979-08-24 1981-04-02 Nec Corp Semiconductor device
FR2905522A1 (en) * 2006-08-31 2008-03-07 St Microelectronics Sa Three dimensional resister for e.g. P type lightly doped single crystal silicon substrate, has vertical path along walls and horizontal path along base in N type strongly doped layer, where layer extends on walls and base of one trench

Similar Documents

Publication Publication Date Title
JPS551103A (en) Semiconductor resistor
JPS5285488A (en) Semiconductor resistance element
JPS5363993A (en) Production of semiconductor device
JPS5363878A (en) Production of semiconductor device
JPS5417682A (en) Semiconductor and its manufacture
JPS5593251A (en) Manufacture of semiconductor device
JPS5371572A (en) Manufacture of lateral pnp transistor
JPS5382275A (en) Production of semiconductor device
JPS533075A (en) Production of mos structure field effect semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS55153325A (en) Manufacture of semiconductor device
JPS5381069A (en) Production of susceptor in cvd device
JPS57109372A (en) Semiconductor device
JPS5289083A (en) Production of semiconductor photoelectric converting element
JPS52129276A (en) Production of semiconductor device
JPS5372473A (en) Manufacture of mis type semicondctor device
JPS5295984A (en) Vertical junction type field effect transistor
JPS55125678A (en) Zener diode
JPS5478978A (en) Semiconductor device
JPS5310286A (en) Production of semiconductor device
JPS5365086A (en) Production of semiconductor device
JPS5676582A (en) Semiconductor device
JPS5295975A (en) Prevention of leak of impurity in manufacturing semiconductor unit
JPS5492180A (en) Manufacture of semiconductor device
JPS57208175A (en) Semiconductor device