JPS57208175A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57208175A
JPS57208175A JP9315581A JP9315581A JPS57208175A JP S57208175 A JPS57208175 A JP S57208175A JP 9315581 A JP9315581 A JP 9315581A JP 9315581 A JP9315581 A JP 9315581A JP S57208175 A JPS57208175 A JP S57208175A
Authority
JP
Japan
Prior art keywords
mis
region
type semiconductor
regions
rectifying junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9315581A
Other languages
Japanese (ja)
Inventor
Yasuo Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9315581A priority Critical patent/JPS57208175A/en
Publication of JPS57208175A publication Critical patent/JPS57208175A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To accurately form a lateral p-n-p-n negative resistance diode in a mass production scale by employing two MIS-structure electrodes. CONSTITUTION:A p type semiconductor first region 9, an n type semiconductor second region 12, a p type semiconductor third region 11 and an n type semiconductor fourth region 10 are arranged in this sequence. The regions 9 and 12 form the first rectifying junction, the regions 12 and 11 form the second rectifying junction, and the regions 11 and 10 form the third rectifying junction. The first MIS-structure electrode 13 and the second MIS-structure electrode 14 are formed through a thin insulating film 15 forming an I layer of the MIS-structure electrode. Energizing electrodes 16, 17 and a protective insulating layer 18 are formed at both ends.
JP9315581A 1981-06-17 1981-06-17 Semiconductor device Pending JPS57208175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9315581A JPS57208175A (en) 1981-06-17 1981-06-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9315581A JPS57208175A (en) 1981-06-17 1981-06-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57208175A true JPS57208175A (en) 1982-12-21

Family

ID=14074648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9315581A Pending JPS57208175A (en) 1981-06-17 1981-06-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57208175A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0376270A (en) * 1989-08-18 1991-04-02 Nec Corp Thyristor type transistor and manufacture thereof
US5552624A (en) * 1992-07-09 1996-09-03 France Telecom Multi-function electronic component, especially negative dynamic resistance element, and corresponding method of fabrication

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4947592A (en) * 1972-09-11 1974-05-08
JPS5067593A (en) * 1973-10-15 1975-06-06
JPS5091282A (en) * 1973-12-12 1975-07-21

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4947592A (en) * 1972-09-11 1974-05-08
JPS5067593A (en) * 1973-10-15 1975-06-06
JPS5091282A (en) * 1973-12-12 1975-07-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0376270A (en) * 1989-08-18 1991-04-02 Nec Corp Thyristor type transistor and manufacture thereof
US5552624A (en) * 1992-07-09 1996-09-03 France Telecom Multi-function electronic component, especially negative dynamic resistance element, and corresponding method of fabrication

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