JPS53109484A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53109484A JPS53109484A JP2389377A JP2389377A JPS53109484A JP S53109484 A JPS53109484 A JP S53109484A JP 2389377 A JP2389377 A JP 2389377A JP 2389377 A JP2389377 A JP 2389377A JP S53109484 A JPS53109484 A JP S53109484A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- operationable
- invertor
- decreasing
- establish
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To establish I<2>L operationable with high speed, by decreasing the base width of invertor through thin epitaxial layer thickness substantially, and by reducing the series resistance of the metallic contact output electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2389377A JPS53109484A (en) | 1977-03-07 | 1977-03-07 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2389377A JPS53109484A (en) | 1977-03-07 | 1977-03-07 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53109484A true JPS53109484A (en) | 1978-09-25 |
Family
ID=12123120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2389377A Pending JPS53109484A (en) | 1977-03-07 | 1977-03-07 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53109484A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6439063A (en) * | 1987-04-30 | 1989-02-09 | Texas Instruments Inc | Integrated circuit containing schottky barrier diode and its manufacture |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50355A (en) * | 1973-05-09 | 1975-01-06 | ||
JPS5120249A (en) * | 1974-08-12 | 1976-02-18 | Osaka Soda Co Ltd | HAROGENKA HORIMAAKAKYOSOSEIBUTSU |
JPS5144388A (en) * | 1974-10-12 | 1976-04-15 | Toshiaki Hosoi | OSUMESUGATASUIHEIMENNAINARAI HOHOOYOBI SOCHI |
-
1977
- 1977-03-07 JP JP2389377A patent/JPS53109484A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50355A (en) * | 1973-05-09 | 1975-01-06 | ||
JPS5120249A (en) * | 1974-08-12 | 1976-02-18 | Osaka Soda Co Ltd | HAROGENKA HORIMAAKAKYOSOSEIBUTSU |
JPS5144388A (en) * | 1974-10-12 | 1976-04-15 | Toshiaki Hosoi | OSUMESUGATASUIHEIMENNAINARAI HOHOOYOBI SOCHI |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6439063A (en) * | 1987-04-30 | 1989-02-09 | Texas Instruments Inc | Integrated circuit containing schottky barrier diode and its manufacture |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53109484A (en) | Semiconductor device | |
JPS53145578A (en) | Diode varister | |
JPS52153647A (en) | Elastic surface wave element | |
JPS5434687A (en) | Semiconductor device | |
JPS53110465A (en) | Semiconductor device | |
JPS5360171A (en) | Electrode for silicon substrate and its production | |
JPS53108394A (en) | Semiconductor intergrated circuit device | |
JPS525567A (en) | Electric clock | |
JPS5353965A (en) | Semiconductor device and its production | |
JPS5232266A (en) | Blazing material for semiconductor device | |
JPS5384487A (en) | Electric charge transfer device | |
JPS52104072A (en) | High voltage semiconductor device | |
JPS57208175A (en) | Semiconductor device | |
JPS5437586A (en) | Composite field effect transistor of junction type | |
JPS5384556A (en) | Semiconductor device | |
JPS5387671A (en) | Semiconductor device | |
JPS52156583A (en) | Electrode formation method in semiconductor device | |
JPS5429562A (en) | Semiconductor device | |
JPS5294779A (en) | Semiconductor device | |
JPS5366369A (en) | Semiconductor device | |
JPS5363985A (en) | Semiconductor device | |
JPS51135542A (en) | Semiconductor device | |
JPS52122080A (en) | Forming methods of ohmic electrodes | |
JPS53143176A (en) | Production of semiconductor device | |
JPS5384687A (en) | Production of semiconductor device |