JPS5294779A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5294779A
JPS5294779A JP1110376A JP1110376A JPS5294779A JP S5294779 A JPS5294779 A JP S5294779A JP 1110376 A JP1110376 A JP 1110376A JP 1110376 A JP1110376 A JP 1110376A JP S5294779 A JPS5294779 A JP S5294779A
Authority
JP
Japan
Prior art keywords
electric power
power transistor
semiconductor device
base
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1110376A
Other languages
Japanese (ja)
Other versions
JPS5925389B2 (en
Inventor
Hiroshi Saikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP51011103A priority Critical patent/JPS5925389B2/en
Publication of JPS5294779A publication Critical patent/JPS5294779A/en
Publication of JPS5925389B2 publication Critical patent/JPS5925389B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To enhance the base insulation property by forming both driving transistor of Darlington connection and electric power transistor onto same ship in planar form, and to increase the property with reduced chip area by forming semiconductor resistance between base and emitter of electric power transistor.
JP51011103A 1976-02-04 1976-02-04 semiconductor equipment Expired JPS5925389B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51011103A JPS5925389B2 (en) 1976-02-04 1976-02-04 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51011103A JPS5925389B2 (en) 1976-02-04 1976-02-04 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5294779A true JPS5294779A (en) 1977-08-09
JPS5925389B2 JPS5925389B2 (en) 1984-06-16

Family

ID=11768666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51011103A Expired JPS5925389B2 (en) 1976-02-04 1976-02-04 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5925389B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111160A (en) * 1979-02-14 1980-08-27 Philips Nv Semiconductor device
WO1984002427A1 (en) * 1982-12-06 1984-06-21 Mitsubishi Electric Corp Power transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081283A (en) * 1973-11-16 1975-07-01

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081283A (en) * 1973-11-16 1975-07-01

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111160A (en) * 1979-02-14 1980-08-27 Philips Nv Semiconductor device
JPH0221147B2 (en) * 1979-02-14 1990-05-11 Fuiritsupusu Furuuiranpenfuaburiken Nv
WO1984002427A1 (en) * 1982-12-06 1984-06-21 Mitsubishi Electric Corp Power transistor

Also Published As

Publication number Publication date
JPS5925389B2 (en) 1984-06-16

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